Beta-gallium oxide/4H-silicon carbide heterojunction ultra-high-temperature ultraviolet detector and preparation method thereof
A UV detector, silicon carbide technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of lack of utilization, high process requirements, complex process, etc., to improve the light receiving area , The effect of increasing detection performance and high responsivity
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Embodiment 1
[0030] See figure 1 , the first aspect of the embodiment of the present invention provides a β-gallium oxide / 4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector, comprising: an N+ type 4H-SiC substrate 1, an N-type 4H-SiC substrate arranged in sequence from bottom to top 4H-SiC epitaxial layer 2 and β-Ga 2 O 3 Functional layer 3.
[0031] The β-Ga 2 O 3 The functional layer 3 has an electron concentration of 1×10 17 cm -3 N-type β-Ga 2 O 3 .
[0032] The β-Ga 2 O 3 A first metal electrode layer 4 and a second metal electrode layer 5 are arranged on the functional layer 3 , and a third metal electrode layer 6 is arranged on both the first metal electrode layer 4 and the second metal electrode layer 5 . The first metal electrode layer 4 forms an ohmic contact with the third metal electrode layer 6 on the first metal electrode layer 4 , and the second metal electrode layer 5 forms an ohmic contact with the third metal electrode layer 6 on the ...
Embodiment 2
[0037] A second aspect of the embodiments of the present invention provides a method for preparing a β-gallium oxide / 4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector, comprising the following steps:
[0038] The first step is to epitaxially grow an N-type 4H-SiC epitaxial layer 2 on the N+ type 4H-SiC substrate 1 .
[0039] Specifically, at a thickness of 300 μm, the nitrogen doping concentration is 5 × 10 19 cm -3 The 4H-SiC substrate was cleaned by RCA standard to form N+ type 4H-SiC substrate 1; then epitaxial growth thickness was 5 μm on N+ type 4H-SiC substrate 1, and the doping concentration was 1×10 16 cm -3 The N-type 4H-SiC epitaxial layer 2;
[0040] Step 2: Sputtering β-Ga with a thickness of 100 nm on the surface of the N-type 4H-SiC epitaxial layer 2 using a magnetron sputtering process2 O 3 Functional layer 3, the process parameters are: voltage, air pressure, time, speed (RF-70W, oxygen and argon 1:20, gas flow 21sccm, growth tim...
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