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Polishing method

A substrate and power technology, applied in the polishing field, can solve the problems of prolonged processing time, increased manufacturing cost, and inability to obtain ionization energy.

Inactive Publication Date: 2004-10-20
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, in the polishing method based on pressure control, because of the upper limit of ionization energy control, the necessary ionization energy cannot be obtained by pressure control, and the increase in dielectric constant cannot be sufficiently suppressed by the type of low dielectric constant film.
[0009] In addition, in O 2 Exposure to H after polishing 2 method in plasma, since the addition of exposure to H 2 steps in the plasma, so the processing time is extended, resulting in increased manufacturing costs

Method used

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Embodiment Construction

[0019] The polishing method of the present invention is a method performed to remove a resist mask formed through an insulating film at least on a substrate.

[0020] As substrates usable in the present invention are generally all substrates used for manufacturing semiconductor devices, such as glass substrates, plastic substrates, semiconductor substrates, semiconductor wafers, and the like. Specifically, various substrates such as elemental semiconductor (silicon, germanium, etc.) substrates, compound semiconductors (GaAs, ZnSe, silicon germanium, etc.) substrates, substrates such as SOI, SOS, etc. Quartz substrate, plastic (polyethylene, polystyrene, polyimide, etc.), etc. Elements such as transistors, capacitors, and resistors, circuits including these elements, interlayer insulating films, wiring layers, and the like can be formed on the substrate.

[0021] As the insulating film formed on the substrate, for example, it is usually formed as an interlayer insulating film,...

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Abstract

An ashing method comprises the steps of: holding a substrate having a resist mask formed through an insulating film in a chamber of an ashing apparatus; and applying an RF electric power to activate an oxygen-containing gas introduced in the chamber in order to perform ashing of the resist mask, while an RF electric power is applied to the substrate.

Description

technical field [0001] The present invention relates to a polishing method, and more particularly, to a polishing method capable of reducing changes in film properties of an interlayer insulating film when polishing a resist formed of a low dielectric constant film as an interlayer insulating film. Background technique [0002] As semiconductor devices have been miniaturized in recent years, inter-wiring capacitance in semiconductor devices has increased, leading to a major problem of signal delay. [0003] As a method of reducing inter-wiring capacitance, for example, there is a method of using a low dielectric constant film as an interlayer insulating film used between wiring layers. [0004] However, when the low dielectric constant film is exposed to plasma such as polishing, the properties of the film tend to change. For example, when a resist pattern formed for hole etching or the like is removed on an interlayer insulating film made of a low dielectric constant film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42H01L21/027H01L21/302H01L21/3065
CPCG03F7/427G03F7/42H01L21/3065
Inventor 西田贵信
Owner SHARP KK