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Carbon nano pipe field emission micromachine acceleration instrument

A field emission and carbon nanotube technology, which is applied in the direction of acceleration measurement using inertial force, can solve the problems of difficult test circuit implementation, difficult sensor processing, and low yield, achieving low power consumption, high sensitivity, The effect of simple processing technology

Inactive Publication Date: 2005-08-17
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the common detection methods include piezoresistive, capacitive, tunnel effect, etc.: piezoresistive detection is to detect acceleration by detecting the change of stress on the sensitive beam; capacitive detection is to detect the capacitance change caused by the position change of the mass block To detect acceleration, the capacitance change is very small, and it is seriously affected by temperature, stray capacitance, electromagnetic interference, etc., and the realization of the test circuit is very difficult; the tunnel effect method uses the sensitivity of tunnel current to displacement changes to detect acceleration. This kind of sensor is difficult to process, and the current yield is not high

Method used

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  • Carbon nano pipe field emission micromachine acceleration instrument
  • Carbon nano pipe field emission micromachine acceleration instrument
  • Carbon nano pipe field emission micromachine acceleration instrument

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as image 3 As shown, the carbon nanotube field emission micromachined accelerometer includes two parts, the lower silicon wafer 1 and the upper silicon wafer 2, which are mainly composed of a silicon film 3, a silicon island 4, a vacuum chamber 5, a carbon nanotube film 6, an insulating layer 8, Cathode 9, anode 10 etc. are composed of several parts. During operation, under the action of acceleration, the silicon island 4 is displaced, causing the emission distance between the cathode 9 and the anode 10 to change, thereby causing the field emission current to change. The connection terminal 7 drawn from the cathode 9 and the anode 10 is connected to an external detection circuit (not shown), and through signal processing such as amplification and filtering, the current signal is detected and analyzed. Measuring the change of the current realizes the detection of the displacement, and finally realizes the detection of the acceleration.

[0024] The processing tec...

Embodiment 2

[0043] Such as Figure 4 As shown, the carbon nanotube field emission micromachined accelerometer includes two parts, the lower silicon wafer 1 and the upper silicon wafer 2, which are mainly composed of a silicon film 3, a silicon island 4, a vacuum chamber 5, a carbon nanotube film 6, an insulating layer 8, The cathode 9 and the anode 10 are composed of several parts, and the lead wires 7 are drawn out from the back of the cathode 9 and the anode 10 respectively.

[0044] 1. Film loading process:

[0045] 1) Thermal oxygen method to grow silicon dioxide (SiO2) on silicon wafers 2 ), and then low-pressure chemical vapor deposition (LPCVD) on silicon dioxide (SiO 2 ) deposited on silicon nitride (Si 3 N 4 );

[0046] 2) Glue rejection, photolithography, RIE engraving silicon nitride (Si 3 N 4 );

[0047] 3) Glue rejection, photolithography, RIE engraving silicon dioxide (SiO 2 ) and silicon nitride (Si 3 N 4 );

[0048] 4) Put it into the potassium hydroxide (KOH) ...

Embodiment 3

[0061] Such as Figure 5 As shown, the carbon nanotube field emission micromachined accelerometer includes two parts: a lower silicon wafer 1 and an upper silicon wafer 2, mainly composed of a silicon beam 3, a silicon island 4, a vacuum chamber 5, a carbon nanotube film 6, an insulating layer 8, Cathode 9, anode 10 etc. are composed of several parts.

[0062] 1. Film-on-sheet process: basically the same as the film-on-sheet process in Example 1;

[0063] 2. The process of film removal: it is basically the same as the process of film removal in Example 1;

[0064] 3. Bonding process:

[0065] 1) Align the upper and lower sheets for gold-silicon eutectic bonding;

[0066] 2) Photolithography on the wafer, ICP engraving the monocrystalline silicon, and engraving the beam structure.

[0067] Scribe the bonded silicon wafers. Attach the marked die to the socket, and press-solder the leads. The packaging is performed using a conventional vacuum packaging process.

[0068] Th...

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Abstract

A micromechanical accelerometer based on the field emitting of carbon nanotubes is composed of the silicon island supported by beam or membrane on upper silicon chip, the receiving anode on the surface of silicon island, the field-emitting cathode of carbone nanotubes on lower silicon chip, and micro vacuum gap between cathode and anode. Its advantages are high sensitivity, low power consumption and simple preparing process.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical systems and sensing technologies, and in particular relates to a carbon nanotube field emission micromechanical accelerometer based on the carbon nanotube field emission displacement sensitivity characteristic. Background technique [0002] In recent years, micromechanical sensors, especially accelerometers, made by MEMS technology have been widely used in military, automotive, aerospace, medical and other fields due to their advantages of small size, low cost, easy integration and mass production. In the fields of microgravity measurement, inclination measurement, aerospace and other fields, since the output signal of the accelerometer is relatively weak, in order to greatly improve the measurement accuracy of the sensor, on the one hand, the test circuit should be continuously improved; improve itself. At present, the common detection methods include piezoresistive, capacitive, tunnel eff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/02G01P15/08
Inventor 叶雄英郭琳瑞周兆英
Owner TSINGHUA UNIV