Sol-gel process of preparing p-type ZnO film

Abstract

The sol-gel process of preparing p-type ZnO film includes preparing Ga or N doped ZnO colloid solution, dropping the colloid solution to cleaned Si chip or other substrate, rotating the substrate to make the colloid solution homogeneous, setting the film at the temperature of RM-100 deg.c for a period of time, heat treatment at 240-300 deg.c and heat treatment at 500-900 deg.c in ammonia atmosphere. The preparing process is simple anad low in cost, and can obtain great area film.

Description

1. Technical field [0001] The invention relates to a growth method for obtaining a p-type zinc oxide (ZnO) film, which mainly adopts a sol-gel method and [0002] Combining co-doping methods (eg Ga and N co-doping) to prepare p-type ZnO thin films. 2. Background technology [0003] ZnO is a very important representative material of II-VI compound semiconductor materials. It has many excellent properties and is the preferred material for the development of visible-ultraviolet light emission, light detection, piezoelectric and power electronic devices. Compared with ZnSe and GaN, in addition to the high direct bandgap (3.37eV), it also has the following advantages: (1) It has a large exciton binding energy (60mev), twice that of GaN, even in At room temperature, excitons still occupy a dominant position in their optical properties, so they have high ultraviolet light emission and low-energy optical pumping at room temperature; (2) have intrinsic substrate materials; (3) can p...

AI Technical Summary

Problems solved by technology

But with NH 3 N doping by decomposition, with poor repeatability, high impedance (100Ω·cm) and low carrier concentration (about 1×10 16 cm -3 ) and other shortcomings, which limit its further application