Prepn of solution maghesium source

A magnesium source and solution technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of unstable vapor pressure and the quality of growth materials, and achieve the effect of good liquefaction ability

Inactive Publication Date: 2003-02-26
NANJING UNIV
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AI Technical Summary

Problems solved by technology

Use the solubilized magnesium source to replace the currently used solid dimagnesocene and dimethyl dimagnesium, and solve the influence of the unstable vapor pressure caused by the use of solid magnesium source on the control of the growth process and the quality of the growth material

Method used

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Embodiment Construction

[0013] 1) Place the three-necked bottle in an ice-water bath, add about 190ml of formic acid aqueous solution, then add 185g of dodecylamine, add 178g of 37% formaldehyde aqueous solution, heat to 70°C, without bubbles, reflux for 7 hours, and stand overnight. To the reaction mixture was added 150 ml concentrated hydrochloric acid (hot). Evaporate to dryness under reduced pressure, dissolve the residue in 200ml of water, add 60g of NaOH under ice-cooling, and separate the free amine by steam distillation. Add 40g of potassium carbonate, evaporate the solvent under reduced pressure, and fractionate the residue under reduced pressure to obtain 160g of N, N'-dimethyldodecylamine.

[0014] 2) Under an inert atmosphere, add 45.6g of dimethylmagnesocene to a 250ml three-necked flask, add about 100ml of hexane, stir to make it homogeneous, and add 53.4g of N,N'-dimethyl Dodecylamine, heated and stirred at about 50°C for 1-2 hours, and completely removed the hexane solvent under redu...

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Abstract

The present invention is a preparation process of solution magnesium source. The said preparation process includes: adding solid magnesiumocene and dimethyl magnesiumocene to an organic solvent of 110 deg.C boiling point and stirring for homogeneity; dropping over C9 alkane, over C9 tertiary amine or aromatic aldehyde or aromatic ketone, over C5 primary amine or aliphatic aldehyde or Schiff base formed by ketone and primary amine; further heating while stirring; and decompression distilling to eliminate solvent to obtain solution magnesium source. The said solvent has excellent solid magnesiumocene and dimethyl magnesiumocene liquefying capacity and one portion of the solvent can liquefy three or more portions of magnesiumocene and dimethyl magnesiumocene completely.

Description

1. Technical field [0001] The invention relates to a method for preparing a solution magnesium source used in the field of optoelectronic technology 2. Background technology [0002] High-purity magnesocene and dimethyl magnesocene are important source materials for compound semiconductor materials grown by metal organic vapor deposition (MOCVD). They are mainly used as P-type dopant materials for semiconductor materials and are used in GaN, AlGaN, indium gallium arsenic The preparation of compound semiconductor materials such as nitrogen (InGaAsN) and indium gallium arsenide (InGaAs) has important application value in the development of high-brightness light-emitting tubes, solar cells, lasers and other optoelectronic devices. [0003] Both pure magnesocene and dimethylmagnesocene are solid at room temperature, the melting point of magnesocene is 176°C, and the melting point of dimethylmagnesocene is 29-30°C. As a solid magnesium source, there is a serious disadvantage of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/448
Inventor 潘毅李翔陈化冰虞磊朱春生孙祥祯
Owner NANJING UNIV
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