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Method for growing gadolinium orthosilicate scintillation crystal

A technology of scintillation crystal and growth method, which is applied in the direction of crystal growth, single crystal growth, single crystal growth, etc. It can solve the problems of high crystal production cost, difficulty in processing seed crystals, cracking and breaking of crystal seed crystals, and avoid cracking problems, solving cracking or breaking problems, and improving yield

Inactive Publication Date: 2004-11-10
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] On the one hand, in the process of processing GSO seed crystals with different axes, due to mechanical vibration, etc., it is easy to cause cleavage, cracking and even crushing of the seed crystals, making it difficult to process the seed crystals;
[0006] On the other hand, in the process of growing crystals using GSO seed crystals, the small thermal shock formed by the solid-liquid interface and the temperature fluctuation in the furnace can easily cause cracking and fracture of the crystal seed crystals, so that the grown GSO crystals and seed crystals fall off.
In addition, when the crystal grows and cools down to room temperature, the temperature fluctuation in the furnace will also cause cleavage and cracking of the seed crystal, which will affect the quality of the GSO crystal connected to the seed crystal.
The above disadvantages will lead to low yield of GSO crystal growth, high crystal production cost, etc.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: use lutetium silicate Lu 2 SiO 5 Growth of Gadolinium Silicate Ce:GSO Crystals from Seed Crystals

[0025] Grow by pulling method above

[0026] Step (1) Make Lu 2 SiO 5 Seed crystal, the direction of the seed crystal is the b-axis ([010] direction), the size is φ4×60mm, and the seed crystal is placed in the seed crystal holder;

[0027] In step (2), gadolinium silicate crystals are grown by using a medium-frequency induction heating iridium crucible pulling method, and the size of the Ir crucible is Φ80×60 mm. The pre-sintered Ce:GSO polycrystalline material was loaded into an Ir crucible and placed in a pulling furnace, under N 2 Heat up to the complete melting of the melt in an air-protected atmosphere;

[0028] Step (3): Adjust the temperature of the next seed to about 2200°C;

[0029] Step (4): Add Lu 2 SiO 5 The seed crystal is in contact with the melt, soaked for 0.5 hours, cooled at a rate of 100°C / H, and then necked and grown (pulling spe...

Embodiment 2

[0031] Embodiment 2: use lutetium yttrium silicate (Lu 0.5 Y 0.5 ) 2 SiO 5 Growth of Gadolinium Silicate Ce:GSO Crystals from Seed Crystals

[0032] Process by step (1) in the above-mentioned embodiment 1 (Lu 0.5 Y 0.5 ) 2 SiO 5 Seed crystal, and pack in the seed crystal folder; According to step (2) in the above-mentioned embodiment 1 in Ar gas and 1vol%H 2 In the mixed reducing atmosphere, the pre-sintered Ce:GSO polycrystalline material is completely melted in the Mo crucible; according to the step (3) in the embodiment 1, the temperature of the next seed is adjusted to about 2000 ° C; according to the step in the embodiment 1 (4) will (Lu 0.5 Y 0.5 ) 2 SiO 5 The seed crystal is in contact with the melt, soaked for 1 hour, and starts to grow by cooling at a rate of 50° C. / H. According to step (5) in Example 1, the crystal grows to a predetermined size of Φ30×60 mm, and the crystal growth ends. Slowly cool down to room temperature, take out the Ce:GSO crystal, th...

Embodiment 3

[0033] Embodiment 3: use yttrium silicate Y 2 SiO 5 Growth of Gadolinium Silicate Ce:GSO Crystals from Crystal Seeds

[0034] Step (1) process Y 2 SiO 5Seed crystal, and put into the seed crystal holder;

[0035] Step (2) in an Ar gas atmosphere, the pre-sintered Ce:GSO polycrystalline material is placed in an Ir crucible and melted;

[0036] Step (3) adjusts the next planting temperature to be about 1980°C;

[0037] Step (4) will Y 2 SiO 5 The seed crystal is in contact with the melt, soaked for 1 hour, and starts to grow by cooling at a rate of 100°C / H;

[0038] Step (5) After the crystal grows to a predetermined size of Φ30×60 mm, the crystal growth ends, the temperature is slowly cooled to room temperature, and the Ce:GSO crystal is taken out. The crystal is transparent, complete, and free from cracks.

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PUM

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Abstract

The invention is a gadolinium silicate scintillator growing method, mainly using the crystals with structures similar to gadolinium silicate's, like lutecium silicate, yttrium silicate and lutecium yttrium silicate, their chemical general formula: (Lu1-xYx)2SiO5(0<=x<=1), as seed crystals, and by selecting a proper seeding temperature, generally at 2200-1980 deg.C, able to grow uncracked gadolinium silicate crystal. It solves the cracking problem of seed crystals when processing, primely solves the problem of cracking or breaking at the seed crystals when crystal growing, and extremely enhancing the yield.

Description

technical field [0001] The present invention relates to gadolinium silicate crystal, particularly relate to adopting lutetium silicate, yttrium silicate or lutetium yttrium silicate (general chemical formula is (Lu 1-x Y x ) 2 SiO 5 (0≤x≤1)) seed crystal growth heterogeneous isomeric pure gadolinium silicate (Gd 2 SiO 5 , or GSO) or rare earth doped gadolinium silicate scintillation crystal growth method. The grown GSO or Ce:GSO crystals can be widely used in fields such as high energy physics, nuclear physics, nuclear medicine, oil well detection and safety detection. Background technique [0002] Gadolinium silicate (Gd 2 SiO 5 , or GSO) is an excellent luminescent host crystal material, and GSO single crystal doped with rare earth ions has better luminescent properties. For example, rare earth cerium ion (Ce) doped GSO crystal (Ce:GSO) is a new type of high-temperature scintillation crystal with excellent performance. The crystal has high light output (8000Ph / MeV)...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/34
Inventor 赵广军何晓明徐军介明印曾雄辉张连翰周圣明庞辉勇周国清
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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