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Method for preparing Si-Al alloy using spray deposition forming process

A spray deposition and alloy technology, applied in electrical components, electrical solid devices, circuits, etc., can solve problems such as increased cost and complex procedures, and achieve the effects of high machining accuracy, low conductivity, and good welding performance

Inactive Publication Date: 2004-12-29
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, powder metallurgy technology often involves complex processes, resulting in increased costs, so it has not been popularized and applied in the preparation of Si-Al alloys.

Method used

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  • Method for preparing Si-Al alloy using spray deposition forming process
  • Method for preparing Si-Al alloy using spray deposition forming process
  • Method for preparing Si-Al alloy using spray deposition forming process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023]A 50% by weight Si-Al alloy was prepared. A 50% by weight Si-Al master alloy ingot was melted in a 150 kg medium frequency induction furnace. Put pure Si with a block size of 4-6 mm and a weight of 15 kg and industrial pure Al with a weight of 15 kg into an intermediate frequency induction furnace crucible, heat up to melt, and cast into an intermediate alloy ingot for later use. The above-mentioned master alloy ingot was remelted, and a 50% by weight Si-Al alloy was prepared by a spray deposition forming method. The process parameters are selected as follows: atomization gas: nitrogen; atomization pressure: 0.7MPa; deposition distance: 550mm; diameter of draft tube: 3.6mm. The coefficient of thermal expansion of the material is 10.6×10 -6 / K. The thermal conductivity is 121W / mK (150°C). The resistivity is 0.4×10 -6 Ωm.

Embodiment 2

[0025] A 60% by weight Si-Al alloy was prepared. A 30% by weight Si-Al master alloy ingot was melted in a 150 kg medium frequency induction furnace. Put pure Si with a block size of 4-6 mm and a weight of 3 kg and industrial pure Al with a weight of 7 kg into an intermediate frequency induction furnace crucible, heat up to melt, and cast into an intermediate alloy ingot for later use. The above-mentioned master alloy ingot was remelted, 4.3 kg of pure Si was added, and a 60% by weight Si-Al alloy was prepared by spray deposition forming method. The process parameters are selected as follows: atomization gas: nitrogen; atomization pressure: 0.8MPa; deposition distance: 600mm; diameter of draft tube: 3.8mm. The coefficient of thermal expansion of the material is 9.1×10 -6 / K. The thermal conductivity is 113W / mK (150°C). The resistivity is 0.9×10 -6 Ωm. The density of the as-deposited 60% by weight Si-Al alloy is 2.3164g / cm 3 , the density after hot isostatic pressing is 2...

Embodiment 3

[0027] A 70% by weight Si-Al alloy was prepared. A 30% by weight Si-Al master alloy ingot was melted in a 150 kg medium frequency induction furnace. Put pure Si with a block size of 4-6 mm and a weight of 6 kg and industrial pure Al with a weight of 14 kg into an intermediate frequency induction furnace crucible, heat up to melt, and cast into an intermediate alloy ingot for later use. The above-mentioned master alloy ingot was remelted, 13.3 kg of pure Si was added, and a 70% by weight Si-Al alloy was prepared by spray deposition forming method. The process parameters are selected as follows: atomization gas: nitrogen; atomization pressure: 0.75MPa; deposition distance: 590mm; diameter of draft tube: 4.0mm. The coefficient of thermal expansion of the material is 8.1×10 -6 / K. The resistivity is 1.6×10 -6 Ωm.

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Abstract

The present invention provides the preparation process of jetting and depositing molded Si-Al alloy, and features that intermediate 25-50 wt% Si-Al alloy ingot is first prepared and then jetted and deposited to prepare 50-70 wt% Si-Al alloy. The technological parameters of jetting and depositing process includes: nitrogen used as atomizing gas, atomizing pressure of 0.6-0.8 MPa, depositing distance of 400-600 mm and guide pipe diameter of 3.2-4.0 mm. The present invention has the advantages of adjustable expansion coefficient of the Si-Al alloy in (6-13)E(-6) / K, heat conductivity of 110-150 W / Mk, and density of 2.4-2.5 g / cu cm, and may be used widely as packing and heat dissipating material for electronic elements in telecomm, aeronautics, astronautics and other industry.

Description

technical field [0001] The invention belongs to the field of silicon-aluminum alloy preparation technology and electronic packaging materials, and in particular provides a method for preparing a spray-formed high-silicon aluminum alloy with low thermal expansion coefficient, high thermal conductivity, low density and machinability, which is widely used in telecommunications, aviation , Aerospace, national defense and other related industrial electronic components required for new packaging or heat dissipation materials. Background technique [0002] In recent years, with the development of the electronic packaging industry towards high density and high speed, it is imperative to develop materials with good thermal conductivity to meet the heat dissipation requirements brought about by the increase in integration. [0003] Ideal advanced electronic packaging materials should match typical semiconductor materials such as gallium arsenide and silicon, or have a slightly higher ...

Claims

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Application Information

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IPC IPC(8): B22F3/115C22C1/04C22C29/18H01L23/29H01L23/373
Inventor 杨滨张济山尧军平陈美英
Owner UNIV OF SCI & TECH BEIJING
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