Method of mfg. GaN-base LED

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as difficulty in finding heat sink materials, unfavorable luminous efficiency and thermal stability of devices, etc.

Inactive Publication Date: 2005-01-12
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, it is currently difficult to find heat sink materials with high thermal conductivity that match the thermal expansion coefficient of GaN
Even if the above two methods are used, since the etching depth of the GaN epitaxial material is usually very shallow (about 500nm), an...

Method used

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  • Method of mfg. GaN-base LED
  • Method of mfg. GaN-base LED

Examples

Experimental program
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Effect test

Embodiment 1

[0033] The basic structure of the material of the grid-shaped small-size light-emitting area light-emitting diode based on gallium nitride material disclosed by the present invention is as follows: figure 1 As shown, its light-emitting area graphics, such as figure 2 Shown: 1 is the p-electrode, 2 is the n-electrode, and 3 is the etched deep groove. The profile obtained along AA is as follows image 3 Shown: 1 is sapphire substrate, 2 is buffer layer, 3 is n-type GaN, 4 is active area, 5 is p-type GaN, 6 is p-type electrode, 7 is n-type electrode, 8 is etched deep grooves.

[0034] When making the device, deep grooves are etched between different small-scale light-emitting regions in the chip, and the deep grooves of the well-shaped pattern are obtained by dry etching or wet etching, so that the isolation between each light-emitting region is achieved, thereby reducing the The thermal strain caused by the mismatch of the thermal expansion coefficient between the substrate ...

Embodiment 2

[0037] The basic structure of the material of the P-shaped small-size light-emitting area light-emitting diode based on gallium nitride material disclosed by the present invention is as follows: figure 1 As shown, only its light-emitting area graphics, such as Figure 4 Shown: 1 is the p-electrode, 2 is the n-electrode, and 3 is the etched deep groove. When making the device, deep grooves are etched between different small-scale light-emitting regions in the chip, and the deep grooves isolated by the Pozi pattern are obtained by dry etching or wet etching, so that the isolation between each light-emitting region is achieved, thereby Reduce the thermal stress caused by the thermal expansion coefficient mismatch between the substrate material and the epitaxial chip, and obtain a GaN-based light-emitting diode with uniform, stable and reliable light emission under high current injection. Experiments have proved that the stability of the high-power GaN-based light-emitting diode ...

Embodiment 3

[0040] GaN-based light-emitting diodes disclosed in the present invention such as Figure 5 As shown, 1 is the heat sink material diamond, 2 is the p-electrode on the heat sink substrate, 3 is the welding electrode, 4 is the p-electrode of the chip, 5 is the p-type gallium nitride, 6 is the active region, and 7 is the n-type nitrogen Gallium chloride, 8 is the buffer layer, 9 is the ZnO substrate, 10 is the etched deep groove, 11 is the n-electrode of the chip, and 12 is the n-electrode on the heat sink substrate. By etching deep grooves between different small-scale light-emitting areas in the chip, small well-shaped or rice-shaped light-emitting areas are formed, so that the isolation between each light-emitting area is achieved, and the GaN-based epitaxial wafer is connected to the high-heat The thermal conductivity of the heat sink material 1 is welded, and the temperature of the chip itself is reduced through the efficient heat conduction of the high thermal conductivity ...

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Abstract

Zone of luminosity in tube core is divided into more than two zones in smaller size through etching deep trough in order to raise luminous efficiency, thermal stability and service life of device. Or, using reverse welding technique welds tube core onto heat sink material with higher thermal conductivity and using laser lift-off technology peels off substrate material. Thermal strain between epitaxial layer and substrate material or between epitaxial layer and heat sink material caused by unmatched coefficients of thermal expansion is controlled in very low level in the invention. The invention raises luminous efficiency, thermal stability and service life of device, and does not generate unfavorable influence on characteristic of GaN substrate material.

Description

technical field [0001] The invention relates to a method for manufacturing gallium nitride-based light-emitting diodes (LEDs) under large injection currents. Luminous efficiency and reliability. The invention belongs to the technical field of manufacturing gallium nitride-based light-emitting diodes. Background technique [0002] Light-emitting devices based on wide-bandgap semiconductor materials have always been the focus of research and development in the field of semiconductor optoelectronics. In particular, semiconductor lighting sources represented by high-power blue LEDs based on III-V nitride materials have the advantages of environmental protection, energy saving, good weather resistance, and long life. Lighting source. But as far as the current situation is concerned, there are still many problems in technology and price when high-power LEDs widely replace traditional lighting in the civilian lighting market. Among these problems, the most important ones are the...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 罗毅韩彦军申屠伟进薛松
Owner TSINGHUA UNIV
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