Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition

A photoresist and composition technology, applied in the field of photoresist peeling, can solve the limitation of cleaning residues, insufficient photoresist and residue peeling ability, unfavorable environmental aspects and processing costs and other problems to achieve the effect of low corrosion

Active Publication Date: 2005-02-09
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0034] However, the organic solvent strippers proposed in such prior art use environmentally harmful substances such as alkylpyrrolidone compounds and sulfone compounds or sulfoxide compounds as organic solvents, and their ability to strip photoresists and residues It is not enough, and the solubility of the polymer substance forming the photoresist is not enough, so for the residue of the photoresist that has been stripped, or attached to the semiconductor substrate or glass substrate, etc., Or not only generate additional solvent by-products, but also because the process conditions are high temperature, it is unfavorable in terms of environment and disposal costs, and it is limited in cleaning residues, and it is necessary to use isopropyl Problems with organic solvents such as alcohol and dimethyl sulfoxide
[0035] In addition, the existing stripping liquid composition cannot achieve the corrosion prevention of the substrate and the stripping property of the photoresist film and the photoresist deteriorated film at the same time in a well-balanced manner. Substrates of wires, especially multi-joint metal wirings containing copper or substrates forming metal wirings and inorganic materials

Method used

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  • Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition
  • Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition
  • Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition

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Experimental program
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Effect test

Embodiment

[0086] Hereinafter, the present invention will be described in more detail with reference to the following examples, but the present invention is not limited to this

[0087] Examples.

[0088] Under the processing conditions described in Table 2, the substrate was immersed in a stripping solution made of the compounds shown in Table 1, rinsed with deionized water, and then scanned with a scanning electron microscope (SEM) (Hitachi, S-4700) ) Observation results. The evaluation of the peeling ability of the photoresist film and the corrosion resistance of the metal layer and the lower layer is shown in Table 2. The evaluation criteria of SEM are as follows.

[0089] [Peelability]

[0090] ◎: Good

[0091] △: Normal

[0092] ×: Bad

[0093] [Anti-corrosion ability]

[0094] ◎: Good

[0095] △: Normal

[0096] ×: Bad

[0097] Organic Amine

Compound

Glycol ether

Compound

Chemical formula 1

of

Compound

Anti-corrosion agent

Deionize...

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PUM

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Abstract

In the process for manufacturing semiconductor device, liquid crystal device and the like, the photoresist which was deteriorated or hardened in a wet etching or dry etching process can be exfoliated by the invention with a dipping process, spraying method or sheet method easily in low temperature and short time. As to metal wiring, particularly metal membrane of the multi-junction structure containing copper, exposed to an exfoliation solution, a substrate with an inorganic material layer having excellent anti-corrosion capability is provided. In the subsequent rinse process, it is possible to carry out a rinse only with water without using an organic solvent like isopropyl alcohol and dimethyl sulfoxide. Moreover, the environmental is affinity photoresist stripper composition without adding an alkyl pyrrolidone compound and a sulfone compound or a sulfoxide compound, and a benzotriazol compound.

Description

Technical field [0001] The present invention relates to a photoresist stripper composition and a photoresist stripping method using the photoresist stripper composition. More specifically, it relates to a stripping liquid composition and a stripping liquid composition used for peeling off the photoresist film remaining after the wet etching and dry etching processes in the manufacturing process of semiconductor elements, liquid crystal display elements, etc. The photoresist stripping method. Background technique [0002] The manufacturing of semiconductor elements or liquid crystal display elements is usually carried out sequentially on a semiconductor substrate or a glass substrate: the process of forming metal wiring with metal, inorganic material or oxide film layer; the process of setting photoresist layer; The exposure process of transferring the mask pattern on the resist; the etching process of etching the film according to the pattern; and the stripping process of removin...

Claims

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Application Information

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IPC IPC(8): G03F7/42H01L21/027H01L21/304
CPCG03F7/425
Inventor 李赫镇金炳默宋仙英
Owner DONGWOO FINE CHEM CO LTD
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