Additive for plating bath
A technology of electroplating baths and additives, applied in the direction of circuits, electrolytic components, electrolytic processes, etc., can solve problems such as electronic component circuits and circuit insulation defects
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Embodiment 1
[0027] 357 g (6.3 mol) of 60 mass % hydrogen peroxide were added to a glass reactor equipped with internal condenser, stirrer, condenser with on / off cock for solvent distillation and liquid introduction Then, under stirring, continuously add 156g (2.0mol) of 2-mercaptoethanol from the liquid inlet at a rate of 0.4mL / min. During this operation, the liquid temperature was maintained at 45°C by adjusting the amount of cooling water fed to the condenser. After the addition of 2-mercaptoethanol was complete, stirring was continued for 10 hours at room temperature. Nitrogen was then blown into the reaction solution through the sample inlet tube, and under the conditions of heating at 110° C. and atmospheric pressure, the reaction solution was kept stirring for 5 hours while part of the steam was discharged to the outside of the reaction system. Then, the reaction solution was passed through a column from the top of a 35 mm diameter column charged with 200 mL of ion exchange resin (...
Embodiment 3
[0033] A 49.2% by mass aqueous solution of 2-hydroxypropane-1-sulfonic acid was prepared in the same manner as in Example 1, except that 2-mercaptoethanol was replaced by 2-mercaptopropanol. No alkali metals were detected from aqueous 2-hydroxypropane-1-sulfonic acid.
[0034] The aqueous 2-hydroxypropane-1-sulfonic acid solution thus prepared was used as the electroplating bath additive (3) according to the invention.
Embodiment 4 and comparative example 2
[0036] Using the plating bath additives prepared in Examples 1 to 3 according to the present invention and the comparative plating bath additive prepared in Comparative Example 1, an aqueous solution of the composition shown in Table 1 was prepared as a plating bath (Sn plating bath).
[0037] SnO
[0038] On the other hand, when adjacent copper circuits of two systems were formed on a silicon wafer and Sn plating was performed using each of the above-prepared plating baths, respectively, a circuit-to-circuit insulation test was performed. As a result, in the case of using the plating bath prepared according to the present invention, satisfactory insulation was achieved, but in the case of the plating bath prepared in Comparative Example 2 using the comparative plating bath additive, the insulation was poor.
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