Method for preparing high electron mobility hydrogenated nano-crystalline silicon thin films

Abstract

Discloses a preparing method for the high electron mobility hydrogenated nanometer silicon film, belongs to the field of semi-conducting material. The invention utilizes the method of plasma enhancement chemical vapor deposition to grow hydrogenated nanometer silicon film, the silane and hydrogen gas as growing source gas, the mono-crystalline silicon material as substrate. With the lattice matching of monocrystallin silicon substrate and the induction of nonrandom structure, the nanometer silicon crystal grain film in high density can be prepared with the crystal thickness is very thin between 2-4 atom layers, and by changing the proportion of doping of phosphorane, the high electron mobility hydrogenated nanometer silicon film whose conductivity can be controlled is attained. The electron mobility of inventive film which combines the present developed silicon technique can reach 102cm2 / Vs, and its electrical transmission performance can be changed in large arrangement by controlling the growth condition, in addition, the electron concentration, mobility, and conductivity can be adjusted easily to meet the variable needs of semi-conducting units.

Description

technical field [0001] The invention relates to a method for preparing a film in the field of semiconductor materials, in particular to a method for preparing a hydrogenated nano-silicon film with controllable conductivity and high electron mobility. Background technique [0002] At present, the electronics industry is the largest industry in the world, with global sales exceeding one trillion US dollars, and semiconductor devices are the foundation of the electronics industry. Of particular note is the crystalline material silicon, which alone accounts for 95% of the semiconductor materials consumed by the electronics industry. The research on the photoelectric properties of silicon materials has very important practical significance for the improvement and improvement of the performance of semiconductor devices. In recent decades, low-cost hydrogenated amorphous silicon materials have been widely used, but their electrical properties have been poor, and the carrier mobili...

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Problems solved by technology

[0003] Found through literature search to prior art, Y.Nasuno etc. are in magazine " Appl. Passivation of Donor Impurities” reported that the growth conditions of the film were as follows: the substrate temperature was 100 to 250 ° C, the growth pressure was 2 to 3 Torr, and the silane flow rate accounted for about 90 percent of the total gas flow rate during the growth process. The mobility of the hydrogenated nano-silicon film is less than 1cm 2 / Vs, its conductivity is naturally poor

So far, although the electron mobility of the hydrogenated nano-silicon film is higher than that of the amorphous silicon film, the mobility is still very low, less than 10cm 2 / Vs, which seriously hinders the application of hydrogenated nano-silicon films