Polishing compound and method for polishing substrate

A polishing agent and substrate technology, applied in polishing compositions containing abrasives, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of reduced polishing speed, inability to visually detect the degree of sedimentation, and unstable dispersion. , to achieve the effect of easy process management
CN1746255AInactive Publication Date: 2006-03-15RESONAC CORPORATION
1 Cites 45 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
RESONAC CORPORATION
Publication Date
2006-03-15
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g / cm<3> and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a polishing agent suitable for use in the field of semiconductor element manufacture, and a substrate polishing method for polishing a substrate using the polishing agent. Background technique

[0002] In the current ULSI semiconductor device manufacturing process, research and development of high-density and miniaturization processing technologies are under way. One of them, CMP (Chemical Mechanical Engineering) technology, is becoming an important part of the semiconductor element manufacturing process for planarization of interlayer insulating films, formation of recesses and trenches (Siyaro-Trench) element separation, plugs and buried metal Necessary technology for wiring formation.

[0003] In the manufacturing process of semiconductor elements, silicon oxide (SiO 2 ), cerium oxide series (CeO 2 ) particles are used as abrasives in chemical mechanical polishing agents to planarize inorganic insulating films suc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More