Method for making hollow structure RF solenoid micro-inductor
A solenoid and micro-inductance technology, applied in the field of microelectronics, can solve problems affecting device performance, metal oxidation, etc., and achieve the effects of good repeatability, high operating frequency, and easy mass production
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Embodiment 1
[0021] (1) On the cleaned and treated double-sided oxidized silicon wafer substrate, the double-sided positron glue AZ4000 series, the photoresist thickness is 5μm, the photoresist drying temperature is 95℃, and the time is 30 minutes; After surface exposure and development, etch silicon dioxide in BHF etching solution, and finally remove all photoresist with acetone to obtain double-sided overprinted alignment symbols;
[0022] (2) Deposit a Cr / Cu bottom layer on the other side of the silicon wafer with a thickness of 100nm. The following processes are all carried out on this surface.
[0023] (3) The thickness of the photoresist is 10μm, the drying temperature of the photoresist is 95°C, and the time is 30 minutes; exposure and development are used to obtain the bottom coil pattern; then the copper bottom coil is electroplated with a thickness of 10μm;
[0024] (4) The thickness of the photoresist is 10μm, the drying temperature of the photoresist is 95℃, and the time is 60 minu...
Embodiment 2
[0034] (1) On the cleaned and treated double-sided oxidized silicon wafer substrate, the double-sided positron glue AZ4000 series, the photoresist thickness is 6μm, the photoresist drying temperature is 95℃, and the time is 30 minutes; After surface exposure and development, etch silicon dioxide in BHF etching solution, and finally remove all photoresist with acetone to obtain double-sided overprinted alignment symbols;
[0035] (2) Deposit a Cr / Cu bottom layer on the other side of the silicon wafer with a thickness of 100nm. The following processes are all carried out on this surface.
[0036](3) The thickness of the photoresist is 5μm, the drying temperature of the photoresist is 95°C, and the time is 30 minutes; exposure and development are used to obtain the bottom coil pattern; then the copper bottom coil is electroplated with a thickness of 5μm;
[0037] (4) The thickness of the photoresist is 10μm, the drying temperature of the photoresist is 95℃, and the time is 60 minutes...
Embodiment 3
[0047] (1) On the cleaned and treated double-sided oxidized silicon wafer substrate, the double-sided positron glue AZ4000 series, the photoresist thickness is 8μm, the photoresist drying temperature is 95℃, and the time is 30 minutes; After surface exposure and development, etch silicon dioxide in BHF etching solution, and finally remove all photoresist with acetone to obtain double-sided overprinted alignment symbols;
[0048] (2) Deposit a Cr / Cu bottom layer on the other side of the silicon wafer with a thickness of 100nm. The following processes are all carried out on this surface.
[0049] (3) The thickness of the photoresist is 8μm, the drying temperature of the photoresist is 95℃, and the time is 30 minutes; exposure and development are used to obtain the bottom coil pattern; then the bottom coil is electroplated with copper, the thickness is 8μm;
[0050] (4) The thickness of the photoresist is 10μm, the drying temperature of the photoresist is 95℃, and the time is 60 minu...
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Abstract
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