Slurry for slicing silicon ingot and method for slicing silicon ingot using same

A technology of slurry and silicon ingots, applied in chemical instruments and methods, fine working devices, stone processing equipment, etc., can solve problems such as wire rope breakage and loss of safety factor, and achieve the effect of reducing cutting resistance

Inactive Publication Date: 2006-05-31
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the transmission speed of the wire rope is increased to compensate for the slowdown of the cutting speed and the transmission speed of the silicon ingot is increased, the safety factor against the poor dispersion of the abrasive particles at the cutting interface will be lost, and the wire rope caused by a sudden increase in tension will occur. fracture

Method used

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  • Slurry for slicing silicon ingot and method for slicing silicon ingot using same
  • Slurry for slicing silicon ingot and method for slicing silicon ingot using same
  • Slurry for slicing silicon ingot and method for slicing silicon ingot using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] 8 parts by mass of sodium hydroxide were dissolved in 100 parts by mass of water to make an alkaline aqueous solution, and the aqueous solution was mixed with 100 parts by mass of triethanolamine and 100 parts by mass of polyethylene glycol. To this mixed solution, 100 parts by mass of SiC abrasive grains (manufactured by Fujimi Inc., GC#1000, average particle diameter about 10 μm) were added and stirred to prepare a slurry for silicon ingot cutting. At this time, the mass ratio of triethanolamine to the water content in the liquid component of the slurry is 100÷100=1.0. In addition, the obtained slurry had a pH of 13.3 at 25°C, and an initial viscosity of 50 mPa·s at a shear rate of 57.6 / s at 90°C.

[0067] Using the obtained slurry for silicon ingot cutting, a polycrystalline silicon ingot sample (3 mm×3 mm×thickness 1 mm) was ground under the grinding conditions shown below. Each time the slurry is collected at the specified time (0, 2, 4, and 7 hours), the viscosity at ...

Embodiment 2

[0089] Using the same slurry for silicon ingot cutting as in Example 1, a polycrystalline silicon ingot sample (3 mm×3 mm×thickness 1 mm) was ground under the grinding conditions shown below. The polishing amount was obtained from the mass change of the sample before and after polishing, and the polishing time was divided by the polishing time to obtain the polishing speed. The results are shown in Table 3.

[0090] Grinding conditions

[0091] Grinding disc: 200mm in diameter (made by Buhler, buffer pad for polishing, super pad for 8-inch wafers)

[0092] Sample position: 65mm from the center of the disc

[0093] Rotation speed of grinding table: 200rpm

[0094] Grinding time: 5 minutes

[0095] Slurry supply: 65cc / min

[0096] Slurry supply position: 65mm from the center of the disk, behind the sample after 30° rotation

[0097] Slurry temperature: 80℃

[0098] Sample pressure: 10N

[0099] Next, the obtained wafer was washed with water, and after drying, the polished surface of...

Embodiment 3

[0114] A slurry for silicon ingot cutting was prepared. The slurry contained 4.9% by mass of sodium hydroxide relative to the total mass of the liquid component of the slurry, and contained triethanolamine at a mass ratio of 0.5 relative to the water in the liquid component of the slurry. The overall quality of the product contains 33% by mass of abrasive grains, and the difference in cutting resistance caused by the difference in slurry temperature has been examined. In addition, the pH of the obtained slurry at 25°C was 13.8.

[0115] Using the obtained slurry for silicon ingot cutting, use it under the cutting conditions shown below figure 2 The composite wire saw used to cut polycrystalline silicon ingots (150mm on each side and 25mm long), and use an eddy current displacement sensor to measure the bending amount of the wire rope during processing.

[0116] Cutting condition

[0117] Wire rope diameter: 100μm (made by JFE Steel, type SRH)

[0118] Wire rope spacing: 0.39mm

[...

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Abstract

In the slurry for silicon ingot cutting according to the present invention, the content of the alkaline substance is at least 3.5% by mass relative to the entire mass of the liquid component of the slurry; amines, and the pH of the slurry is above 12. Moreover, in the silicon ingot cutting method of this invention, the said slurry for silicon ingot cutting is used at 65 degreeC - 95 degreeC. As a result, the cutting resistance at the time of silicon ingot dicing is reduced, and high-quality wafers can be efficiently obtained.

Description

Technical field [0001] The present invention relates to a slurry for cutting silicon ingots and a method for cutting silicon ingots using the slurry, which are used when cutting monocrystalline, polycrystalline, or amorphous silicon ingots for manufacturing semiconductor and solar cell wafers. Background technique [0002] At present, wire saws are used in the cutting of silicon ingots. The wire saws can cut or cut multiple wafers at a time with a small cutting cost and uniform thickness. The cutting of the silicon ingot using this wire saw is performed by pressing the silicon ingot on a walking wire rope, and introducing a cutting slurry containing abrasive grains into the cutting interface. In the cutting of silicon ingots using this kind of wire rope, the wafers are required to maintain high quality, and at the same time, the cutting speed can be increased, so that the cutting cost and cutting pitch can be reduced, and the wafer processing cost can be reduced. [0003] In orde...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C10M173/02B24B57/02B28D5/00C10N30/06C10N40/22H01L21/304
CPCB28D5/007C09K3/1463Y10T83/04Y02P70/10
Inventor 鹤田明三滨保昌之河崎贵文西田博一富永尚史
Owner MITSUBISHI ELECTRIC CORP
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