Adhesive film and method for forming metal film using same

Abstract

The present invention relates to an adhesive film capable of preventing damage to the metal non-film-forming surface of a semiconductor wafer during metal film formation and reducing contamination of the wafer surface. By using an adhesive film with an adhesive layer formed on one surface of a base film with at least one layer of film with a gas permeability of 5.0cc / m2·day·atm or less, the metal non-film-making surface can be protected, and the use of The solvent cleaning process can further reduce the contamination of the metal non-film-forming surface, and improve productivity and workability.

Description

technical field

[0001] The present invention relates to an adhesive film for forming a metal film on a non-circuit-forming surface of a semiconductor wafer, and more particularly to an adhesive film capable of suppressing damage to the non-film-forming surface of the metal and contamination to the wafer during metal film forming, and an adhesive film using the adhesive film. The metal film method of bonding the film. According to the present invention, it is possible to omit the cleaning process of the metal non-film-forming surface, etc., to realize the rationalization of the process, and to improve the productivity. Background technique

[0002] As one of the high-temperature treatment steps in the semiconductor manufacturing process, there is a process of forming a metal film on the non-circuit-formed surface of the semiconductor wafer (hereinafter referred to as the back surface of the semiconductor wafer) after grinding.

[0003] Conventionally, a semiconductor wafer o...