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Adhesive film and method for forming metal film using same

A technology for metal and adhesive films, which is applied in the fields of adhesives, thin film/sheet adhesives, semiconductor/solid device manufacturing, etc. It can solve the complex surface of metal non-film surface, damage or breakage of metal film, production Obstacles and other problems can be avoided, and the cleaning process can be saved, damage can be suppressed, and productivity can be improved.

Active Publication Date: 2006-10-11
MITSUI CHEM TOHCELLO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a process of removing the resist on the non-film-forming surface of the metal with a solvent or the like after the metal film is formed. Therefore, it poses a large obstacle to production in terms of complicated work and environmental problems.
In addition, in recent years, the shape of the adherend on which the metal film is formed has also varied, and the surface of the metal non-film film surface has become complicated, and the resist may remain on the metal non-film film surface after solvent cleaning.
In addition, when the adherend itself is thin and the resist or the like is not evenly applied, there is a problem that the adherend is damaged or broken when the metal film is formed. Therefore, instead of this, it is strongly expected to easily protect the metal non-film. surface parts

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] A 10nm polyethylene terephthalate film (thickness 50μm, gas permeability 4.8cc / m) formed with an aluminum oxide film layer 2 Day·atm, water absorption rate 0.05% by weight) on the side where the oxide film layer is not formed, the storage elastic modulus at 150°C is 5.5×10 5 The adhesive layer (20 μm) of Pa was used to prepare the adhesive film 1.

[0060] The adhesive layer uses 5.0% by weight of a functional group monomer (acrylic acid) that forms a crosslinking point with a crosslinking agent, 5.0% by weight of a bifunctional monomer (ADET-1800) that controls cohesion within particles, and acrylic acid, based on 100 parts by weight. An emulsion copolymer of 90% by weight of esters (methyl methacrylate, butyl acrylate, and 2-ethylhexyl acrylate), mixed with 5.0 parts by weight of a crosslinking agent (polyglycerol polyglycidyl ether) as a binder.

[0061] The adhesive film 1 is pasted on the mirror surface silicon wafer, and metal films of Ti, Ni, and Au are formed r...

Embodiment 2

[0063] A 10nm polyethylene terephthalate film (thickness 50μm, gas permeability 4.8cc / m) laminated with an aluminum oxide film layer 2 ·day·atm, water absorption rate 0.05% by weight) on the surface without the oxide film layer formed and the substrate film of the ethylene-vinyl acetate copolymer film (thickness 120μm), the storage elastic modulus at 150°C is 5.5 ×10 5 An adhesive layer (20 μm) of Pa was formed on the side of the ethylene-vinyl acetate copolymer layer to produce an adhesive film 2 .

[0064] The same adhesive as in Example 1 was used for the adhesive layer.

[0065] Metal film formation was carried out in the same manner as in Example 1. Table 1 shows the obtained results.

Embodiment 3

[0067] Fabricate a polyethylene terephthalate film (thickness 50 μm, gas permeability 4.8 cc / m) laminated with aluminum oxide film layer 10 nm 2 ・day・atm, water absorption rate 0.05% by weight) A laminated film of a polyethylene film (thickness 50 μm) formed on the surface without an oxide film layer formed on the polyethylene film side has a storage modulus of elasticity at 150°C of 5.5×10 5 The adhesive layer (20 μm) of Pa was used to prepare the adhesive film 3 .

[0068] The same adhesive as in Example 1 was used for the adhesive layer.

[0069] Metal film formation was carried out in the same manner as in Example 1. Table 1 shows the obtained results.

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Abstract

The present invention relates to an adhesive film capable of preventing damage to the metal non-film-forming surface of a semiconductor wafer during metal film formation and reducing contamination of the wafer surface. By using an adhesive film with an adhesive layer formed on one surface of a base film with at least one layer of film with a gas permeability of 5.0cc / m2·day·atm or less, the metal non-film-making surface can be protected, and the use of The solvent cleaning process can further reduce the contamination of the metal non-film-forming surface, and improve productivity and workability.

Description

technical field [0001] The present invention relates to an adhesive film for forming a metal film on a non-circuit-forming surface of a semiconductor wafer, and more particularly to an adhesive film capable of suppressing damage to the non-film-forming surface of the metal and contamination to the wafer during metal film forming, and an adhesive film using the adhesive film. The metal film method of bonding the film. According to the present invention, it is possible to omit the cleaning process of the metal non-film-forming surface, etc., to realize the rationalization of the process, and to improve the productivity. Background technique [0002] As one of the high-temperature treatment steps in the semiconductor manufacturing process, there is a process of forming a metal film on the non-circuit-formed surface of the semiconductor wafer (hereinafter referred to as the back surface of the semiconductor wafer) after grinding. [0003] Conventionally, a semiconductor wafer o...

Claims

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Application Information

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IPC IPC(8): H01L21/02C09J7/02H01L21/304H01L21/68
Inventor 才本芳久片冈真五十岚康二早川慎一
Owner MITSUI CHEM TOHCELLO INC
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