Adhesive film and method for forming metal film using same

A technology for metal and adhesive films, which is applied in the fields of adhesives, thin film/sheet adhesives, semiconductor/solid device manufacturing, etc. It can solve the complex surface of metal non-film surface, damage or breakage of metal film, production Obstacles and other problems can be avoided, and the cleaning process can be saved, damage can be suppressed, and productivity can be improved.

Active Publication Date: 2006-10-11
MITSUI CHEM TOHCELLO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a process of removing the resist on the non-film-forming surface of the metal with a solvent or the like after the metal film is formed. Therefore, it poses a large obstacle to production in terms of complicated work and environmental problems.
In addition, in recent years, the shape of the adherend on which the metal film is formed has also varied, and the surface of the metal non-

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0058] Example 1

[0059] A 10nm polyethylene terephthalate film (thickness 50μm, gas permeability 4.8cc / m 2 ·Day·atm, water absorption rate 0.05% by weight) on the side where the oxide film layer is not formed, the storage elastic modulus formed at 150°C is 5.5×10 5 An adhesive layer (20 μm) of Pa, an adhesive film 1 was produced.

[0060] The adhesive layer uses 5.0% by weight of the functional monomer (acrylic acid) that forms the crosslinking point with the crosslinking agent, 5.0% by weight of the bifunctional monomer (ADET-1800) that controls the cohesive force in the particles, and acrylic An emulsion copolymer of 90% by weight of ester (methyl methacrylate, butyl acrylate, 2-ethylhexyl acrylate) and 5.0 parts by weight of a crosslinking agent (polyglycerol polyglycidyl ether) as an adhesive.

[0061] The adhesive film 1 is stuck on the mirror silicon wafer, and metal films of Ti, Ni, and Au are respectively applied. Each metal film is under pressure less than or equal to 1...

Example Embodiment

[0062] Example 2

[0063] A 10nm polyethylene terephthalate film (thickness 50μm, gas permeability 4.8cc / m 2 ·Day·atm, water absorption rate of 0.05% by weight) on the base film of the ethylene-vinyl acetate copolymer film (thickness 120μm) on the side without oxide film layer formed, the storage elastic modulus at 150°C will be 5.5 ×10 5 The adhesive layer (20 μm) of Pa was formed on the side of the ethylene-vinyl acetate copolymer layer, and the adhesive film 2 was produced.

[0064] For the adhesive layer, the same adhesive as in Example 1 was used.

[0065] In the same manner as in Example 1, a metal film was formed. The obtained results are shown in Table 1.

Example Embodiment

[0066] Example 3

[0067] A 10nm polyethylene terephthalate film (thickness 50μm, gas permeability 4.8cc / m 2 ·Day·atm, water absorption rate of 0.05% by weight) and polyethylene film (thickness 50μm) laminated film formed on the side of the polyethylene film (thickness 50μm), the storage elastic modulus at 150°C is 5.5×10 5 An adhesive layer (20 μm) of Pa, an adhesive film 3 was produced.

[0068] For the adhesive layer, the same adhesive as in Example 1 was used.

[0069] In the same manner as in Example 1, a metal film was formed. The obtained results are shown in Table 1.

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Abstract

The present invention relates to an adhesive film capable of preventing damage to the metal non-film-forming surface of a semiconductor wafer during metal film formation and reducing contamination of the wafer surface. By using an adhesive film with an adhesive layer formed on one surface of a base film with at least one layer of film with a gas permeability of 5.0cc/m2·day·atm or less, the metal non-film-making surface can be protected, and the use of The solvent cleaning process can further reduce the contamination of the metal non-film-forming surface, and improve productivity and workability.

Description

technical field [0001] The present invention relates to an adhesive film for forming a metal film on a non-circuit-forming surface of a semiconductor wafer, and more particularly to an adhesive film capable of suppressing damage to the non-film-forming surface of the metal and contamination to the wafer during metal film forming, and an adhesive film using the adhesive film. The metal film method of bonding the film. According to the present invention, it is possible to omit the cleaning process of the metal non-film-forming surface, etc., to realize the rationalization of the process, and to improve the productivity. Background technique [0002] As one of the high-temperature treatment steps in the semiconductor manufacturing process, there is a process of forming a metal film on the non-circuit-formed surface of the semiconductor wafer (hereinafter referred to as the back surface of the semiconductor wafer) after grinding. [0003] Conventionally, a semiconductor wafer o...

Claims

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Application Information

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IPC IPC(8): H01L21/02C09J7/02H01L21/304H01L21/68
Inventor 才本芳久片冈真五十岚康二早川慎一
Owner MITSUI CHEM TOHCELLO INC
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