LCD disply device and manufacture thereof

A liquid crystal display device and transistor technology, which can be used in identification devices, semiconductor/solid-state device manufacturing, photolithographic process exposure devices, etc., and can solve problems such as unsatisfactory standards and affecting exposure.

Active Publication Date: 2006-11-01
QUANTA DISPLAY JAPAN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The change of this channel length causes the ON current value of the insulated gate transistor to change greatly. Although strict manufacturing management is usually required, the channel length, which is the pattern size of the halftone image exposure area, will significantly affect the exposure. Quantity (light source intensity and pattern accuracy of the mask, especially the size of Line And Space), coating thickness o

Method used

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  • LCD disply device and manufacture thereof
  • LCD disply device and manufacture thereof
  • LCD disply device and manufacture thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0179] According to Embodiment 1, first, on one main plane of the glass substrate 2, use a vacuum film-forming device such as SPT to coat the first metal layer with a film thickness of about 0.1-0.3 μm, such as heat-resistant metals such as Cr, Ta, Mo or It is an alloy or silicide of the above substances. If necessary, AL or AL alloy may be used and laminated with a related metal substance having high heat resistance in order to achieve low resistance. Next, if figure 1 (A) with figure 2 As shown in (A), the scanning line 11 and the accumulation capacitance line 16 which also serve as the gate 11A are selectively formed by microfabrication technology. In addition, when the accumulation capacitance 15 is formed between the pixel electrode (drain) and the preceding scanning line, the accumulation capacitance line 16 is not an essential component.

[0180] Next, a PCVD device is used on the whole glass substrate 2, for example, the first SiNx layer 30 composed of a gate insu...

Embodiment 2

[0190] Embodiment 2 is the same as Embodiment 1. First, on one main plane of the glass substrate 2, use a vacuum film-forming device such as SPT to coat the first metal layer with a film thickness of about 0.1-0.3 μm, such as Cr, Ta, Mo, etc. Refractory metals or alloys or silicides of the above substances, such as image 3 (A) with Figure 4 As shown in (A), the scanning line 11 and the accumulation capacitance line 16 which also serve as the gate 11A are selectively formed.

[0191] The second is to use a PCVD device on the whole glass substrate 2, for example, the first SiNx layer 30, which is composed of a gate insulating layer with a film thickness of about 0.3-0.2-0.05 μm, and contains almost no impurities. The first amorphous silicon layer 31 composed of the channel, and the second amorphous silicon layer 33 composed of the source / drain of the insulated gate transistor and three thin film layers containing impurities such as phosphorus, continue to use Vacuum film-for...

Embodiment 3

[0204] In Embodiment 3, after the scanning lines 11 and the accumulation capacitance lines 16 are formed, the first amorphous silicon layer 31 and the insulating gate containing impurities such as phosphorous are sequentially covered, for example, with a film thickness of about 0.3-0.2-0.05 μm. After the second amorphous silicon layer 33 and three kinds of thin film layers composed of the source / drain electrodes of the type transistor, continue to use a vacuum film forming device such as SPT to coat a heat-resistant metal layer with a film thickness of about 0.1 μm, such as Ti , Cr, Mo and other heat-resistant metals or the thin film layer 34 composed of silicides of the above-mentioned substances, all are carried out according to the same process as in Example 1.

[0205] Such as Figure 5 (B) with Figure 6 As shown in (B), after microfabrication technology, the heat-resistant metal layer 34, the second amorphous silicon layer 33, and the first amorphous silicon layer 31 ar...

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Abstract

A method for preparing liquid crystal display device includes utilizing semitone image exposure technique to semiconductor layer of insulation grid film transistor and source/drain electrode wiring on primary photo-etching process, setting signal wire and analog pixel electrode in stacked mode between transparent conduction layer and low resistance metal, removing off low resistance metal layer on said pixel electrode to obtain pixel electrode formed by transparent conduction layer when opening is formed on passivated insulation layer, removing off grid insulation layer to obtain contact point properly when semiconductor layer is formed.

Description

technical field [0001] The invention relates to a liquid crystal display device with a color image display function, in particular to an active liquid crystal display device. Background technique [0002] In recent years, due to advances in microfabrication technology, liquid crystal material technology, and high-density mounting technology, liquid crystal display devices with a diagonal of 5 to 50 cm have been widely used in television images or various image display devices as commercial standards. In addition, color display can be easily realized by forming RGB colored layers in advance on one of the two glass substrates constituting the liquid crystal panel. In particular, the built-in switch components in each pixel, that is, the so-called active (Active: Active) LCD panel, can reduce low-order distortion, and the response speed is fast, so as to ensure an image with a high contrast ratio. . [0003] The above-mentioned liquid crystal display device (liquid crystal pa...

Claims

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Application Information

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IPC IPC(8): G02F1/136G03F7/20G09F9/35G09G3/36H01L21/027H01L29/786
Inventor 川崎清弘
Owner QUANTA DISPLAY JAPAN
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