Electroless copper plating solution and method for electroless copper plating

An electroless copper plating, solution technology, applied in circuits, electrical components, liquid chemical plating, etc., can solve problems such as difficult uniform plating

Inactive Publication Date: 2006-11-22
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This electroless copper plating solution is stable and has a high copper deposition rate, but when using this solution on semiconductor wafers or other such mirror surfaces, it is difficult to plate evenly

Method used

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  • Electroless copper plating solution and method for electroless copper plating
  • Electroless copper plating solution and method for electroless copper plating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] In a 0.16% by weight solution of a silane coupling agent as an equimolar reaction product of imidazole and γ-glycidoxypropyltrimethoxysilane, an aqueous solution of palladium chloride was added to reach 50 mg / liter, thereby preparing For the pretreatment agent for plating, the above-mentioned silicon wafer with the tantalum nitride film was immersed in the pretreatment agent at 50° C. for 5 minutes. Thereafter, the silicon wafer was heat-treated at 200°C for 15 minutes, followed by electroless copper plating at 60°C for 5 minutes. The composition of the plating solution is copper sulfate 0.04 mol / liter, ethylenediamine tetraacetate 0.4 mol / liter, formalin 0.1 mol / liter, sodium hypophosphite 0.1 mol / liter and 2,2'-bipyridine 10 mg / L, and the pH value is 12.5 (pH regulator: sodium hydroxide). A plated film was formed uniformly and without unevenness on the entire surface with a film thickness of 50 nm.

Embodiment 2

[0048] The silicon wafer with the tantalum nitride film was pretreated in the same manner as in Example 1, and then the silicon wafer was electrolessly copper-plated at 60° C. for 5 minutes. The composition of the plating solution is 0.04 mol / liter of copper sulfate, 0.4 mol / liter of ethylenediamine tetraacetate, 0.1 mol / liter of glyoxylic acid, 0.1 mol / liter of hypophosphorous acid and 10 mg / liter of 2,2'-dipyridyl rise, and the pH value is 12.5 (pH regulator: potassium hydroxide). A plated film was formed uniformly and without unevenness on the entire surface with a film thickness of 50 nm.

Embodiment 3

[0050] The silicon wafer with the tantalum nitride film was pretreated in the same manner as in Example 1, and then the silicon wafer was electrolessly copper-plated at 60° C. for 5 minutes. The composition of the plating solution is copper sulfate 0.04 mol / liter, ethylenediamine tetraacetate 0.4 mol / liter, formalin 0.1 mol / liter, ammonium hypophosphite 0.1 mol / liter and 2,2'-bipyridine 10 mg / L, and the pH value is 12.5 (pH regulator: sodium hydroxide). A plated film was formed uniformly and without unevenness on the entire surface with a film thickness of 50 nm.

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Abstract

An electroless copper plating solution characterized by using hypophosphorous acid or a hypophosphite salt as a second reducing agent together with a first reducing agent, and simultaneously using a stabilizer for inhibiting copper deposition. The first reducing agent includes formalin and glyoxylic acid, and the hypophosphite includes sodium hypophosphite, potassium hypophosphite, and ammonium hypophosphite. Stabilizers that inhibit copper deposition include 2,2'-bipyridine, imidazole, nicotinic acid, thiourea, 2-mercaptobenzothiazole, sodium cyanide, or thioglycolic acid. When electroless copper is plated on mirror surfaces (such as semiconductor wafers, etc.) where plating reactions are difficult to occur, the electroless copper plating solution can realize uniform plating at a reduced temperature.

Description

technical field [0001] The present invention relates to an electroless copper plating solution mainly used for electroless copper plating of mirror surfaces such as semiconductor wafers, and also to an electroless copper plating method using the plating solution. Background technique [0002] Electroless copper plating is very promising as a copper film formation method for ULSI precision wiring, and to replace the sputtering and electrolytic copper plating methods currently used. [0003] Traditionally, when copper is used to electrolessly plate semiconductor wafers or other such mirror surfaces, the plating reactivity is low and it is difficult to plate uniformly across the substrate. Problems currently encountered in electroless copper plating include, for example, low adhesion strength and poor plating uniformity when forming a copper film on a barrier metal layer such as tantalum nitride. [0004] Formalin is commonly used as a reducing agent for electroless copper pla...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/40C23C18/31H01L21/288
CPCC23C18/405H01L21/288C23C18/1683C23C18/1851
Inventor 矢部淳司关口淳之辅伊森彻藤平善久
Owner JX NIPPON MINING & METALS CORP
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