MEMS micro high sensitivity magnetic field sensor and manufacturing method

Abstract

A MEMS micro type of magnetic field transducer with high sensitivity consists of MEMS twisted micro lens with two fixed ends, magnetism sensitive film and collimator with double optical fiber. It is featured as forming twist space of component between metal feedback electrode and magnetism sensitive film, packaging said collimator by utilizing optical package resin through regulation frame. Its preparing method is also disclosed.

Description

technical field

[0001] The invention relates to a structure and a manufacturing method of a miniature high-sensitivity magnetic field sensor, in particular, utilizes semiconductor microfabrication technology combined with semiconductor materials to realize the structural manufacture of the miniature high-sensitivity magnetic field sensor. Through different packages, the device can detect magnetic fields in various environments such as vacuum, air, and underwater. The invention belongs to the field of magnetic field sensors. Background technique

[0002] The magnetic field sensor is a sensor sensitive to magnetic signals or parameters that can be converted into magnetic signals. It is the earliest and most widely used type of sensor. The compass, one of my country's four great inventions, is a sensor that utilizes this phenomenon. Magnetic field sensors have been industrialized in many fields, with an annual usage of more than one billion pieces, widely used in motors, elect...

Examples

Embodiment

[0098] Embodiment: The specific process implementation method of MEMS high-sensitivity magnetic field sensor is as follows:

[0099] (1) First, on the Pyrex7740 glass support body 1, the metal aluminum electrode material 2 is evaporated by sputtering or electron beam, such as image 3 (b) shown.

[0100] (2) Select semiconductor materials such as silicon wafer 1 (ordinary P+ type (100) double throw silicon wafer ( Figure 4 a), the thickness is 420±20 microns, the resistivity is 0.01-0.02 ohm cm), and the glue is applied ( image 3 c), photolithography development ( image 3 d) After that, by corrosion ( image 3 e), to glue ( image 3 f) and other processes to realize the patterned production of the feedback electrode 2 .

[0101] (3) By etching on the substrate silicon, SOI or other materials ( Figure 4 a) Upper glue ( Figure 4 b), photolithography and development to get as Figure 4 (c) The patterned mask shown.

[0102] (4) Etching or corrosion ( Figure 4 d) For...

technical field

[0001] The invention relates to a structure and a manufacturing method of a miniature high-sensitivity magnetic field sensor, in particular, utilizes semiconductor microfabrication technology combined with semiconductor materials to realize the structural manufacture of the miniature high-sensitivity magnetic field sensor. Through different packages, the device can detect magnetic fields in various environments such as vacuum, air, and underwater. The invention belongs to the field of magnetic field sensors. Background technique

[0002] The magnetic field sensor is a sensor sensitive to magnetic signals or parameters that can be converted into magnetic signals. It is the earliest and most widely used type of sensor. The compass, one of my country's four great inventions, is a sensor that utilizes this phenomenon. Magnetic field sensors have been industrialized in many fields, with an annual usage of more than one billion pieces, widely used in motors, elect...

Examples

Embodiment

[0098] Embodiment: The specific process implementation method of MEMS high-sensitivity magnetic field sensor is as follows:

[0099] (1) First, on the Pyrex7740 glass support body 1, the metal aluminum electrode material 2 is evaporated by sputtering or electron beam, such as image 3 (b) shown.

[0100] (2) Select semiconductor materials such as silicon wafer 1 (ordinary P+ type (100) double throw silicon wafer ( Figure 4 a), the thickness is 420±20 microns, the resistivity is 0.01-0.02 ohm cm), and the glue is applied ( image 3 c), photolithography development ( image 3 d) After that, by corrosion ( image 3 e), to glue ( image 3 f) and other processes to realize the patterned production of the feedback electrode 2 .

[0101] (3) By etching on the substrate silicon, SOI or other materials ( Figure 4 a) Upper glue ( Figure 4 b), photolithography and development to get as Figure 4 (c) The patterned mask shown.

[0102] (4) Etching or corrosion ( Figure 4 d) For...

Images