Method for realizing nitride semiconductor device inter-active-area isolation utilizing boron ion injection

Abstract

Aiming at issues of influencing on connection of interconnection line caused by height of tabletop and low yield existed in insulation of tabletop adopted by nitride semiconductor device, the invention discloses method of electrics insulation between active areas of nitride semiconductor device by using boron ion implantation. The method includes steps: after forming source ohmic contact and drain ohmic contact on AlGaN / GaN hetero junction, the method protects place, where ion implantation is not needed to carry out, of surface of AlGaN / GaN hetero junction material and device by using mask; forming high resistance damage zone on the said place not protected by using boron ion bombardment one or two times. Ensuring electrics insulation for device, the invention raises performance of device and is in favor of raising yield.

Description

technical field

[0001] The invention relates to a semiconductor manufacturing technology, in particular to an isolation method for improving the isolation effect between active regions of nitride semiconductors and the yield of products, in particular to a method for realizing nitride semiconductor devices by boron ion implantation method of isolation between the active regions. Background technique

[0002] Devices based on gallium nitride (GaN) are the current research focus of compound semiconductor devices and circuits. In the fabrication of aluminum gallium nitride (AlGaN) / gallium nitride high electron mobility transistors (HEMT) and their circuits, in order to make the device Electrical isolation between the active regions of the device is required for proper operation of the circuit. The most commonly used isolation method is mesa isolation, which achieves electrical isolation between devices by removing the active layer between devices. Figure 1 shows a general sche...

Images