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Calixresorcinarene compounds, photoresist base materials, and compositions thereof

A photoresist, resorcinol cup technology, applied in the preparation of organic compounds, optics, organic chemistry, etc., can solve the problems of reduced sensitivity of photoresist and inability to carry out reaction, etc.

Inactive Publication Date: 2007-03-28
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to achieve the above objects, the present inventors have repeatedly conducted intensive studies, and as a result, it has been found that the problems that have occurred when utilizing conventional photoresists for ultrafine processing are caused by the following reasons, which include: The molecular shape of the photoresist substrate composed of conventionally used polymer compounds or the reactivity caused by the structure of the protective group in the molecular structure of the photoresist substrate, or, in the synthetic photoresist The sensitivity of the photoresist is reduced due to alkaline impurities left behind as a reactant or catalyst when the resist substrate is used, or mixed in from the human body or the environment
[0008] Especially in the photoresist, the absorption degree is high when the far ultraviolet rays or electron rays pass through the photoresist layer, and in the case of low light source intensity, although the photoacid generator is often made into a high concentration, but due to the Even a small amount of basic impurities mixed in it will neutralize the protons generated by the acid generator, so that the desired reaction cannot proceed

Method used

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  • Calixresorcinarene compounds, photoresist base materials, and compositions thereof
  • Calixresorcinarene compounds, photoresist base materials, and compositions thereof
  • Calixresorcinarene compounds, photoresist base materials, and compositions thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0155] [Photoresist substrate]

[0156] (1) Synthesis of calix-[4]-resorcinol arene

[0157] Under nitrogen flow, in the three-neck flask (capacity 500 milliliters) that is fully dried and replaced with nitrogen, is provided with dropping funnel, Dimroth condenser, thermometer, encloses resorcinol (33g, 300 mmol) and acetaldehyde ( 17 ml, 300 mmol), and distilled methanol (300 ml) was added under nitrogen pressure to prepare a methanol solution. This methanol solution was heated to 75°C with stirring in an oil bath. Next, 75 ml of concentrated hydrochloric acid was slowly dropped into the mixture using a dropping funnel, followed by heating and stirring at 75° C. for 2 hours. After the reaction was completed, it was left to cool to room temperature, and then cooled with an ice bath. After standing still for 1 hour, white crude crystals of the target compound were formed, which were filtered off. This crude crystal was washed twice with pure water (100 milliliters), then re...

manufacture example 1

[0161] [Photoresist substrate]

[0162] (1) Synthesis of calix-[4]-resorcinol arenes

[0163] Under nitrogen flow, in the three-neck flask (capacity 500 milliliters) that is fully dried and replaced with nitrogen, is provided with dropping funnel, Dimroth condenser, thermometer, encloses resorcinol (33g, 300 mmol) and acetaldehyde ( 17 ml, 300 mmol), and distilled methanol (300 ml) was added under nitrogen pressure to prepare a methanol solution. This methanol solution was heated to 75°C with stirring in an oil bath. Next, 75 ml of concentrated hydrochloric acid was slowly dropped into the mixture using a dropping funnel, followed by heating and stirring at 75° C. for 2 hours. After the reaction was completed, it was left to cool to room temperature, and then cooled with an ice bath. After standing still for 1 hour, white crude crystals of the target compound were formed, which were filtered off. This crude crystal was washed twice with pure water (100 milliliters), then r...

Embodiment 2

[0169] [Photoresist composition]

[0170] As the substrate, 87 parts by weight of the resorcinolcalixarene compound from which basic impurities were removed by washing with an acidic aqueous solution and treating with an ion exchange resin in Production Example 1 (3) was used, and triphenylsulfonium trifluoride was used as the PAG. 10 parts by weight of methanesulfonate, 3 parts by weight of 1,4-diazabicyclo[2.2.2]octane as a quencher, and dissolve the solid composed of these components at a ratio that can finally make it 20% by weight In 2-methoxyethanol, a photoresist solution (photoresist composition) was thus prepared. This photoresist solution was spin-coated (4000 rpm, 60 seconds) on a silicon wafer, and heated at 90° C. for 180 seconds to form a thin film with a thickness of 200 nm. Next, using an electron beam exposure device (JBX-5DR manufactured by JEOL Ltd.), 20 μC / cm 2 Electron beams used to draw line and space patterns with line widths and line spaces of 50nm, 8...

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Abstract

Calixresorcinarene compounds represented by the general formula (1): [wherein R is 2-methyl-2-adamantyloxycarbonylmethyl or the like]. The compounds are useful as photoresist base material, particularly for nanofabrication with extreme ultraviolet rays or electron beam.

Description

technical field [0001] The present invention relates to a novel resorcinol calixarene compound, a photoresist substrate used in the electrical and electronic fields such as semiconductors, and the optical field, and a composition thereof. Background technique [0002] Photolithography using extreme ultraviolet (EUV) or electron beams can be used as a high-productivity, high-resolution microfabrication method in the manufacture of semiconductors, etc., and it is now required to develop a type of photolithography used in this method High sensitivity, high resolution photoresist. The photoresists used in these photolithography methods must have high sensitivity from the viewpoint of productivity and resolution of desired fine patterns. [0003] Examples of the photoresist used for ultrafine processing using deep ultraviolet rays include known chemically amplified polyhydroxystyrene photoresists used for ultrafine processing using KrF lasers. In this resist, it is known that m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C67/31C07C69/712G03F7/039H01L21/027
Inventor 石井宏寿大和田贵纪芝崎祐二上田充
Owner IDEMITSU KOSAN CO LTD