Tantalum carbide-covered carbon material and process for producing the same

A technology of tantalum carbide and carbon materials, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of reduced softness, easy cracks, and shortened life of carbon materials, so as to achieve inhibition of release, Effect of reducing corrosion, reducing cracks and peeling

Active Publication Date: 2007-04-04
TOYO TANSO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the highly crystalline coating film obtained by the CVD method has a columnar structure, which reduces flexibility and tends to cause cracks.
Ammonia or hydrogen corrodes carbon materials through cracks, shortening the life of carbon materials

Method used

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  • Tantalum carbide-covered carbon material and process for producing the same
  • Tantalum carbide-covered carbon material and process for producing the same
  • Tantalum carbide-covered carbon material and process for producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～3

[0106] Set the thermal expansion coefficient to 7.8×10 -6 / K, the gas release pressure based on 1000℃ is 10 -6 A graphite substrate with a diameter of 66 mm and a thickness of 10 mm with Pa / g and an ash content of 2 ppm was subjected to the above halogen treatment, and then a tantalum carbide coating film was formed on the carbon substrate under the CVD conditions shown in Table 1 below. At this time, the C / Ta composition ratio of the coating film passes C 3 H 8 Adjust the flow rate to 1.0~1.2. Using the CVD conditions shown in Table 1, the film thickness was changed to 21, 34, and 44 μm by changing the reaction time to 11, 18, and 25 hours. Then, heat treatment was further performed at 2000° C. for 10 hours in a hydrogen atmosphere to further improve the crystallinity of the coating film 3. The X-ray diffraction results of Examples 1 to 3 are shown in Figs. 15 to 17. In X-ray diffraction, the diffraction lines of the (220) plane were mainly confirmed, and the diffraction lines of...

Embodiment 4～8

[0112] The tantalum carbide coating film 3 was formed by the CVD method on the same carbon substrate 1 as used in Examples 1 to 3. The CVD conditions are: temperature is fixed at 850℃, pressure is fixed at 1330Pa, and C is changed 3 H 8 And TaCl 5 The flow rate of tantalum carbide changes in the range of 1-30μm / hr. In Examples 4 to 6, after the coating film 3 was formed, it was heat-treated in a hydrogen atmosphere at 2000° C. for 10 hours. The crystal structure of the coating film 3 was detected by X-ray diffraction. As a result, the intensity ratio of the (220) plane diffraction line was the strongest, which was 4 times or more than the intensity of the second strong diffraction line. As shown in Table 3, the half-value width of the diffraction line of the (220) plane of the coating film 3 is in the range of 0.11 to 0.14°. Such a coating film will not crack or peel before the thermal shock test in a reducing gas atmosphere, which is ideal. In particular, the coating film exhibit...

Embodiment 9～18

[0116]The carbon material 100 was manufactured using various graphite substrates 1 having the characteristics shown in Table 4. The halogen treatment was performed on a graphite substrate having various coefficients of thermal expansion (CTE) shown in Table 4 with a diameter of 60 mm and a thickness of 10 mm, so that the ash content of the graphite substrate was 10 ppm or less. However, in Example 18, the halogen treatment was omitted, and the ash content of the graphite substrate 1 was 16 ppm. A tantalum carbide coating film 3 (thickness 43 μm) was formed on the substrate under the same conditions as in Examples 1 to 3. The composition ratio of C / Ta of the coating film 3 passes C 3 H 8 The flow rate is adjusted to 1.0~1.2. After the coating film 3 is formed, heat treatment is performed at 2000° C. for 10 hours in a hydrogen atmosphere. The (220) plane of the coating films of Examples 9 to 18 all showed the strongest diffraction intensity, and the intensity was 4 times or more tha...

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Abstract

This invention provides a tantalum carbide-covered carbon material, which has excellent corrosion resistance to reducing gases and thermal shock resistance at high temperatures, and a process for producing the same. The tantalum carbide-covered carbon material comprises a carbon base material and a covering film provided on the carbon base material directly or through an intermediate layer. The covering film is formed of a large number of densely aggregated fine crystals of tantalum carbide. Preferably, the covering film exhibits such an X-ray diffraction pattern that the diffraction intensity based on (220) face of tantalum carbide is the highest intensity. More preferably, this diffraction intensity is not less than four times higher than the second highest diffraction intensity.

Description

Technical field [0001] The invention relates to a tantalum carbide coated carbon material and a manufacturing method thereof. More specifically, it relates to a tantalum carbide-coated carbon material that can be used as a component of an apparatus for forming single crystals of compound semiconductors such as SiC and GaN, and a method of manufacturing the same. Background technique [0002] In the past, in the production of single crystals for semiconductors such as Si, GaN, SiC, etc., CVD equipment called MOCVD and MOVPE or MBE equipment for epitaxial growth can be used. In the production of SiC, the sublimation method, the HTCVD method (high temperature CVD method), etc., which require a high temperature of 1500°C or higher, especially 1800°C or higher, are often used. In the production of these single crystals for semiconductors, hydrogen, ammonia, hydrocarbon gases, etc. are generally used as carrier gas or raw material gas. [0003] At a high temperatur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/87C23C16/32C04B41/89C23C16/56
Inventor 藤原广和山田典正阿部纯久
Owner TOYO TANSO KK
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