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A low temperature preparing method of non lead ferroelectric film

A ferroelectric thin film and low temperature technology, applied in the application of magnetic film to substrate, etc., can solve the problems of high precision and difficulty in process requirements, and achieve the effects of wide applicability, mild hydrothermal reaction conditions, and low energy consumption

Inactive Publication Date: 2010-05-12
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the novelty of this method, the high precision and difficulty of the process, there is no report on the growth of non-lead ferroelectric thin films by the method of combining sol-gel and hydrothermal

Method used

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  • A low temperature preparing method of non lead ferroelectric film
  • A low temperature preparing method of non lead ferroelectric film
  • A low temperature preparing method of non lead ferroelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: preparation (Ba x Sr 1-x )TiO 3 , (x=0-0.9) ferroelectric thin film

[0018] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2 ], strontium acetate [Sr(CH 3 COO) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. First heat barium acetate and strontium acetate (according to a certain stoichiometric ratio x=0.10) in glacial acetic acid solution to boiling, stop heating after 10 minutes, and cool to room temperature, the molar ratio of Ba+Sr to glacial acetic acid is 1: 10. Then the mixed solution of titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) is added to the glacial acetic acid solution containing barium and strontium, wherein: the molar ratio of Ti to AcAc is 1: 2, titanium isopropoxide and The molar ratio of ethylene glycol ether is 1:10. Finally, ethylene glycol ether was added to adjust the concentration of the final solution to 0.3M. ...

Embodiment 2

[0021] Embodiment 2: prepare Ba(Ti 1-x Zr x )O 3 , (x=0-0.9) ferroelectric thin film

[0022] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2 ], zirconium isopropoxide [Zr(OC 3 h 7 ) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. First heat barium acetate in glacial acetic acid solution to boiling, stop heating after 5 minutes, and cool to room temperature, the molar ratio of Ba to glacial acetic acid is 1:10; then zirconium isopropoxide and titanium isopropoxide, ethylene di The mixed solution of alcohol ethyl ether and acetylacetone (AcAc) is added to the barium-containing glacial acetic acid solution, wherein: the molar ratio of Ti to AcAc is 1:2, (titanium isopropoxide + zirconium isopropoxide): ethylene glycol ether The molar ratio is 1:10. Finally, ethylene glycol ether was added to adjust the concentration of the final solution to 0.3M. After standing for 24 hours, it was used...

Embodiment 3

[0026]The coated gel film is the same as in Example 1, and then the film is heat-treated in a 350° C. hydrothermal kettle for 10 hours. The volume of the solution in the hydrothermal kettle is 50 ml, which respectively includes: 0.3 mol / L barium ion, 0.5 mol / L strontium ion, 0.3 mol / L titanium ion and hydroxide ion (PH=10). Then a gold electrode is sputtered on its upper surface by DC sputtering method as an upper electrode, the diameter of which is 0.5mm, and the thickness is about 100nm.

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Abstract

The invention relates to a method for preparing non-lead ferro-electricity film, wherein it comprises that: immerging film into water solution at 90-350Deg. C for 10-30h; splashing on upper electrode.The inventive film as Ba(Zr,Ti)O3(BZT), Ba(Ti,Sr)O3(BST), etc has warm reaction temperature, low energy consumption and wide application, while it can control reaction temperature, time, pressure, formula and pH value adjust the reaction and crystal growth. The inventive film can be used to prepare non-volatile memory, infrared detector, etc.

Description

technical field [0001] The invention belongs to the technical field of preparation methods for preparing non-lead-based ferroelectric thin films. Background technique [0002] In the past few decades, various thin film preparation methods have been adopted to prepare ferroelectric thin films, including: different physical vapor deposition techniques plasma sputter deposition (PSD) and ion beam sputter deposition (IBSD) , Pulsed Laser Flash Deposition (PLAD), Molecular Beam Evaporation Epitaxy (MBE) in Electron Beam or Electric Furnace, Metal Organic Vapor Deposition (MOCVD), Chemical Dissolution (MOD such as sol-gel process and metal organic deposition) . Although great progress has been made in the development and application of various preparation techniques for thin films, however, for most methods, further work is needed to optimize deposition parameters and conditions. [0003] Sol-gel is adopted by people because of its advantages of accurate stoichiometric ratio con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F41/14C04B41/45
Inventor 翟继卫徐金宝
Owner TONGJI UNIV
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