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Nd-doped potassium yittrium tungstate laser crystal growth method and growth device

A laser crystal and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of limited crystal size, low crystal quality, slow growth speed, etc., to achieve improved characteristics, improved growth process, Avoid the effects of an excessively long growth cycle

Inactive Publication Date: 2007-07-11
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Nd 3+ : KY(WO 4 ) 2 Crystals still have problems such as low crystal quality, limited crystal size, and slow growth rate.

Method used

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  • Nd-doped potassium yittrium tungstate laser crystal growth method and growth device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] With 15mol% K 2 W 2 o 7 , 35mol% K 2 WO 4 And 0.2mol% KF as joint flux. Carry out batching according to following reaction formula:

[0027] K 2 CO 3 +2WO 3 = K 2 W 2 o 7 +CO 2

[0028] 4WO 3 +(1-x)Y 2 o 3 +xNd 2 o 3 +K 2 CO 3 = 2KNd x Y 1-x (WO 4 ) 2 +CO 2

[0029] Raw material Y 2 o 3 、WO 3 、K 2 CO 3 、Nd 2 o 3 According to Nd x :KY 1-x (WO 4 ) 2 The molar ratio represented by the chemical formula is weighed, put into a corundum mortar, ground and mixed evenly, pressed into a sheet with a hydraulic press at a pressure of 3.0 tons per square centimeter, and put into a platinum crucible of Φ75mm×85mm, and the platinum crucible is placed in After sintering at 1000°C for 20 hours in the muffle furnace for solid-state reaction, take it out and re-grind the tablet, then put it into a larger Φ90mm×100mm platinum crucible, and put the platinum crucible in a molten salt pulling growth furnace , while connecting with Nd:KY(WO 4 ) 2 The seed...

Embodiment 2

[0032] Using 5mol% K 2 W 2 o 7 , 45mol% K 2 WO 4 And the KCl of 0.5mol% is used as joint fluxing agent, carries out batching according to the reaction formula given in embodiment 1. Raw material Y 2 o 3 、WO 3 、K 2 CO 3 、Nd 2 o 3 According to Nd x :KY 1-x (WO 4 ) 2 The molar ratio represented by the chemical formula is weighed, put into a corundum mortar, ground and mixed evenly, pressed into a sheet with a hydraulic press at a pressure of 3.0 tons per square centimeter, and put into a platinum crucible of Φ60mm×70mm, and the platinum crucible is placed in After sintering at 1000°C for 20 hours in the muffle furnace for solid-state reaction, take out the re-grinded tablet and put it into a larger Φ70mm×80mm platinum crucible, and put the platinum crucible together in molten salt for pulling growth In the furnace, at the same time connect the Nd:KY (WO 4 ) 2 The seed crystal rod of the seed wafer is connected to the ceramic rod and then centered, and then penetr...

Embodiment 3

[0034] With 10mol% K 2 W 2 o 7 , 40mol% K 2 WO 4 And the KF of 1.0mol% is used as joint flux, carries out batching according to the reaction formula given in embodiment 1. According to the operation method of Example 2, after the steps of raw material weighing, grinding, tableting, crucible loading, sintering, regrinding, re-pressing, and crucible reloading, the platinum crucible was placed in a molten salt pulling growth furnace, Connect with Nd:KY(WO 4 ) 2 The seed crystal rod of the seed wafer is connected to the ceramic rod and then centered, and then penetrated into the bulk crystal material Nd in the platinum crucible 3+ :KY(WO 4 ) 2 At 5mm above, seal the furnace door of the molten salt pulling growth furnace and vacuumize it, then fill it with a small amount of nitrogen, start to heat up to around 1090°C and fully melt for 8 hours, and keep stirring to fully melt the polycrystalline material, keep the temperature at 1110°C 4 hours, and then began to slowly coo...

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Abstract

The invention discloses a growing method of large-size high-quality yttrium potassium laser crystal of tungstic acid with doped tungsten and growing device, which is characterized by the following: changing proportion of composite flux through connecting chemical formula; adjusting sash velocity, rotary velocity and miter growing course; obtaining the product.

Description

technical field [0001] The invention belongs to the technical field of laser crystal materials, in particular to a kind of neodymium-doped potassium yttrium tungstate (chemical formula is Nd:KY(WO 4 ) 2 , referred to as Nd:KYW) laser crystal growth method and its growth device. Background technique [0002] LD-pumped all-solid-state lasers are the focus of research and development in the laser field. Exploring better laser crystal laser materials suitable for LD pumping has become a constant pursuit of material researchers. The laser crystal itself is composed of doped active ions and host crystal. The performance of the host crystal directly affects the application of the crystal, and different active ions will have different energy level structures in the same matrix crystal. The stimulated radiation is generated, so that different wavelengths of laser light are emitted when the conditions for laser generation are met. Rare earth-doped tungstate laser materials are a ki...

Claims

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Application Information

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IPC IPC(8): C30B29/32C30B15/00H01S3/16
Inventor 陈振强王如刚林浪胡国勇
Owner JINAN UNIVERSITY
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