Uv-blocking layer for reducing uv-induced charging of sonos dual-bit flash memory devices in beol processing

a dual-bit flash memory and uv-induced charging technology, applied in the field of sonos flash memory devices, can solve the problems of charge buildup in the charge storage layer, subsequent increases in v.sub.t, charge buildup and concomitant increase in v.sub.t, and achieve the effect of convenient adjustmen
US20040151025A1Inactive Publication Date: 2004-08-05MONTEREY RES LLC
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
MONTEREY RES LLC
Publication Date
2004-08-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. A SONOS flash memory device, including a SONOS flash memory cell; and at least one UV-protective layer, in which the UV-protective layer comprises a substantially UV-opaque material, is provided. In one embodiment, the device includes a substantially UV-opaque contact cap layer.
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Description

[0001] The present invention relates to a process for preparation of a SONOS flash memory device including an ultraviolet (UV) radiation blocking layer for reducing UV-induced charging of device in back-end-of-line (BEOL) processing.

[0002] Non-volatile memory devices are currently in widespread use in electronic components that require the retention of information when electrical power is terminated. Non-volatile memory devices include read-only-memory (ROM), programmable-read-only memory (PROM), erasable-programmable-read-only memory (EPROM), and electrically-erasable-programmable-read-only-memory (EEPROM) devices. EEPROM devices differ from other non-volatile memory devices in that they can be electrically programmed and erased. Flash EEPROM devices are similar to EEPROM devices in that memory cells can be programmed and erased electrically. However, flash EEPROM devices enable the erasing of all memory cells in the device using a single electrical current pulse.

[0003] Product dev...

Claims

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