Low contamination components for semiconductor processing apparatus and methods for making components

Abstract

Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The invention relates to components for semiconductor material processing equipment. The components are formed of materials that can reduce contamination during semiconductor material processing. The invention also relates to methods of making the components. [0003] 2. Description of the Related Art [0004] In the field of semiconductor material processing, vacuum processing chambers are used for etching and chemical vapor deposition (CVD) of materials on substrates. Process gases are flowed into the processing chamber while a radio frequency (RF) field is applied to the process gases to generate a plasma of the process gases. The plasma performs the desired etching or deposition of selected materials on wafers. Examples of parallel plate, transformer coupled plasma (TCP™), which is also called inductively coupled plasma (ICP), and electron-cyclotron resonance (ECR) reactors and components thereof are disclosed in co...

AI Technical Summary

Benefits of technology

[0021] The invention also provides semiconductor processing apparatus that in

Problems solved by technology

This ion bombardment, combined with plasma chemistries and/or etch byproducts, can produce significant erosion, corrosion and corrosion-erosion of the plasma-exposed surfaces of the processing chamber.

This attack causes problems including short part lifetimes, increased consumable costs, particulate contamination, on-wafer transition metal contamination and process drift.

However, these parts are continuously attacked by the plasma and, consequently, ultimately erode or accumulate polymer buildup.

Eventually, these

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