Method and apparatus for the improvement of material/voltage contrast
a voltage contrast and material technology, applied in the direction of individual semiconductor device testing, semiconductor/solid-state device testing/measurement, instruments, etc., can solve the problems of limited access to the lower metal layer from the wafer frontside, introduction of operational complexity, and ineffective prior methods for imaging non-biased regions. , to achieve the effect of enhancing voltage contrast and high quality
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[0034] The present invention provides a method and a system for implementing the method, for inducing steady state voltage contrast between regions on an IC chip backside, so as to observe structures on a FIB image. The inventive method enables the FIB imaging without necessity of external voltage bias of the n-well regions. It further enables the use of the FIB ion beam to map the wafer from the backside, i.e., to locate positions of various materials and diffusion regions. The method is believed to be based on differential capacitive characteristics of an MOS-like structure (M=Induced Surface Conductive layer created by the beam interaction with an oxide; O=oxide; S=underlying semiconductor) which affect the secondary electron emission from the substrate. The surface of the exposed wafer backside acts as the top plate of a capacitor, a layer or feature below the surface acts as the bottom plate of the capacitor, and the intervening material or materials such as silicon or silicon ...
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