Pattern formation method

Abstract

A resist film is first formed on a substrate. Subsequently, a first barrier film including a water-soluble solvent is formed on the resist film, and a second barrier film including an alcoholic solvent is formed on the first barrier film. Thereafter, with a liquid provided on the second barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the first barrier film and the second barrier film. Then, after removing the first barrier film and the second barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.

Description

CROSS-REFERENCE TO RELATED APLICATIONS [0001] This application claims priority under 35 U.S.C. §119 on Patent Application No. 2005-28471 filed in Japan on Feb. 4, 2005, the entire contents of which are hereby incorporated by reference. BACKGROUND OF THE INVENTION [0002] The present invention relates to a pattern formation method for use in fabrication process or the like for semiconductor devices, and more particularly, it relates to a pattern formation method in which a barrier film is formed on a resist film in immersion lithography. [0003] In accordance with the increased degree of integration of semiconductor integrated circuits and downsizing of semiconductor devices, there are increasing demands for further rapid development of lithography technique. Currently, pattern formation is carried out through photolithography using exposing light of a mercury lamp, KrF excimer laser, ArF excimer laser or the like, and use of F2 laser lasing at a shorter wavelength of 157 nm is being e...

AI Technical Summary

Benefits of technology

[0015] When the resist pattern 2a in such a defective shape is used for etching a target film, the resultant pattern of the target film is also in a defective shape, which disadvantageously lowers the productivity and the yield in the fabrication process for semiconductor devices.

[0041] In this case, the acidic solution can be a cesium sulfonate (Cs2SO4) aqueous solution or a phosphoric acid (H3PO4) aqueous solution. Thus, the refractive index of the liquid can be increased. Furthermore, the liquid may include an additive such as a surface active agent.

Problems solved by technology

However, in removing the barrier film 3 after the exposure, the solubility of the barrier film 3 is so insufficient that the pattern failure occurs.

When the resist pattern 2a in such a defective shape is used for etching a target film, the resultant pattern of the target film is also in a defective shape, which disadvantageously lowers the productivity and the yield in the fabrication process for semiconductor devices.

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