Polishing medium for chemical-mechanical polishing, and polishing method

Abstract

This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable that the water-soluble polymer has a weight-average molecular weight of 500 or more and the polishing medium has a coefficient of kinetic friction of 0.25 or more, a Ubbelode's viscosity of from 0.95 mPa.s (0.95 cP) to 1.5 mPa.s (1.5 cP) and a point-of-inflection pressure of 5 kPa (50 gf / cm2).

Description

[0001] This application is a Continuation application of application Ser. No. 10 / 069,404, filed May 6, 2002, the contents of which are incorporated herein by reference in their entirety. Ser. No. 10 / 069,404 is a National Stage application, filed under 35 USC 371, of International (PCT) Application No. PCT / JP00 / 05765, filed Aug. 25, 2000.TECHNICAL FIELD [0002] This invention relates to a polishing medium for chemical-mechanical polishing, especially suited for polishing in the step of forming wirings of semiconductor devices, and a polishing method making use of the same. BACKGROUND ART [0003] In recent years, as semiconductor integrated circuits (hereinafter “LSI”) are made high-integration and high-performance, new techniques for fine processing have been developed. Chemical-mechanical polishing (hereinafter “CMP”) is also one of them. The CMP is often used in LSI fabrication steps, in particular, in making interlaminar insulating films flat in the step of forming multilayer wiring...

AI Technical Summary

Benefits of technology

[0017] An object of the present invention is to provide a polishing medium for CMP and a polishing method which can form highly reliable buried metal film patterns in a good efficiency by making the etching rate sufficiently low while keeping a high CMP rate.

Problems solved by technology

It, however, is difficult for the copper alloys to be finely processed by dry etching often used in forming conventional aluminum alloy wirings.

With repetition of this, the etching of the metal film may proceed at the part of dales, resulting in a damage of the effect of flattening.

However, the formation of buried wirings by CMP using a conventional polishing medium for chemical-mechanical polishing which contain solid abrasive grains involves the problems such that; (1) it may cause a phenomenon that the surface of the metal wiring having been buried is isotropically corroded at the middle thereof to become hollow like a dish (hereinafter “dishing”); (2) it may cause polishing mars (scratches) arising from solid abrasive grains; (3) the wash processing to remove solid abrasive grains remaining on the substrate surface after polishing is troublesome; and (4) a cost increase may arise because of the prime cost of solid abrasive grains themselves and the disposal of waste liquor.

However, the BTA has a very high protective-film-forming effect, and hence it may greatly lower not only the rate of etching but also the rate of polishing.

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