Production Method of Material Film and Production Apparatus of Material Film

Abstract

According to a containing-fullerene production method by the background art, containment target ions obtained by ionizing containment target atoms have been irradiated to empty fullerene within a vacuum vessel. This has resulted in a problem of a lower formation efficiency of containing-fullerene, in case of forming containing-fullerene which internally contains an atom larger than a six-membered ring of fullerene. It is thus devised to irradiate ions having larger diameters and masses to a fullerene film, simultaneously with irradiation of containment target ions thereto. Since ions having larger masses collide with fullerene molecules, the fullerene molecules are largely deformed and openings thereof are enlarged. Containment target ions are caused to enter cages of fullerene molecules, thereby increasing a probability of formation of containing-fullerene.

Description

TECHNICAL FIELD[0001]The present invention relates to a production method and a production apparatus for irradiating plasma or vapor including implantation target atoms, implantation target molecules, or the like onto a material such as fullerene, carbon nanotube, or the like within a vacuum vessel, thereby producing containing-fullerene, hetero-fullerene, or containing-nanotube.[0002]2. Background Art[0003]Patent-Unrelated Reference 1: “Nature and Application of Fullerene Plasma”, Journal of Plasma / Nuclear Fusion Academic Society, Vol. 75, No. 8, pp. 927-933, 1999 August[0004]Patent-related reference 1: Japanese Patent Application No. 2004-001362[0005]Containing-fullerenes are materials which are made of spherical clusters of carbon molecules known as fullerenes and containment target atoms such as alkali metal contained therein, and which are expected to be applied to electronics, medical treatment, and the like. Known as a production method of containing-fullerene is a method (pa...

AI Technical Summary

Benefits of technology

[0071]1. The electric potential body is arranged in the plasma to be irradiated to the material film, and the voltage to be applied to the electric potential body is controlled, thereby enabling a density of ions in the plasma to be controlled and controllability of the material film production process to be improved.

[0072]2. The electric potential body arranged in the plasma comprises electroconductive wires in the lattice pattern, thereby enabling a density of ions to be controlled to become uniform within a cross section of a plasma flow without disturbing the plasma flow by the electric potential body.

[0073]3. By measuring an electric current flowing between the deposition-assistance substrate and the bias power supply, it becomes possible to accurately measure a density of ions to be irradiated to the deposition-assistance substrate.

[0074]4. Since it is possible to produce fullerenes such as containing-fullerene, hetero-fullerene, and the like at a good efficiency, it becomes possible to attain mass-production of fullerenes for industrial utilization.

[0075]5. By simultaneously irradiating containment target ions and collision ions, or containment target molecules and collision ions toward material molecules constituting a material film, the material molecules are largely deformed to thereby increase a probability of containment of the containment target ions or containment target molecules into the material molecules, respectively.

[0076]6. Plasma is transported by utilizing the magnetic field, thereby enabling charged particles having a polarity opposite to that of implantation target ions, to be transported together with the implantation target ions. Thus, attractive forces act between the charged particles constituting the plasma in a manner to rarely diverge the plasma, thereby enabling achievement of a high density ion implantation even with a low energy.

Problems solved by technology

However, excessively higher collision energies between a containment target atom and a fullerene molecule lead to breakage of the fullerene molecule, whereas excessively lower collision energies rarely lead to containment.

Thus, to improve a production efficiency of containing-fullerenes, it is insufficient to merely improve a collision probability, and it is further required to control a collision energy.

Although it has been possible to control a collision probability by virtue of the conventional containing-fullerene production method based on the fullerene / plasma reaction scheme, it has been impossible to control a collision energy.

Nonetheless, this technique has not been yet laid open to public inspection as of the filing date of this patent application, and thus is not a known technique.

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