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Gas barrier film and electronic device

a technology of gas barrier film and electrode film, which is applied in the direction of metallic material coating process, synthesizing resin layered products, record information storage, etc., can solve the problems of disconnections or short circuits in electrode films, poor gas barrier properties of transparent resin films, and inability to adequately prevent water vapor entry, etc., to achieve high surface flatness, facilitate handling, inhibit layer separation

Inactive Publication Date: 2012-02-09
LINTEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0031]According to the gas barrier film of the present invention, since surface irregularities in the surface of the base are filled in by a layer containing a polyorganosiloxane-based compound provided on the base, the shape of surface irregularities in the surface of the base are inhibited from standing out on the surface. Consequently, this gas barrier film allows the obtaining of high surface flatness.
[0032]In addition, as a result of providing the inorganic material layer on the layer containing a polyorganosiloxane-based compound and depositing the inorganic material layer by dynamic ion mixing method, the layer containing a polyorganosiloxane-based compound and the inorganic material layer are securely adhered, thereby inhibiting layer separation. When carrying out processing using the gas barrier film of the present invention, the gas barrier film can be applied to a processing apparatus having a small diameter roll, thereby facilitating handling.
[0033]In addition, since the inorganic material layer deposited by dynamic ion mixing method has few pinholes, superior gas barrier properties, and is resistant to the occurrence of cracking when the film is bent, the gas barrier properties thereof can be maintained over a long period of time. Moreover, since both the inorganic material layer and the layer containing a polyorganosiloxane-based compound have gas barrier properties, this gas barrier film allows the obtaining of extremely superior gas barrier properties.
[0034]In addition, according to the electronic device of the present invention, as a result of being provided with a gas barrier film as described above, gas such as water vapor which is present outside the electronic device is reliably prevented from entering inside the electronic device, thereby allowing the obtaining of superior weather resistance and durability. In addition, even in the case of having a process by which an electrode film is deposited on the surface of a gas barrier film, since the surface flatness of the gas barrier film is high, the formation of protrusions on the electrode film during the deposition process is prevented, thereby making it possible to avoid disconnections and short circuits attributable to the protrusions on the electrode film.

Problems solved by technology

However, transparent resin films have poor gas barrier properties in comparison with glass substrates, and are unable to adequately prevent entrance of water vapor into solar modules as is.
In addition, since transparent resin films have low surface flatness, when an electrode film is deposited on the surface thereof, protrusions that cause disconnections or short circuits are formed in the electrode film.
In addition, the inorganic thin film is subject to the occurrence of cracking when the gas barrier films are bent, thereby resulting in the risk of gas easily permeating the film at locations where cracking has occurred.
However, in addition the production process of this film being complex, adhesion between the inorganic thin film and organic thin film is low, thereby resulting in increased susceptibility to separation of the thin films.

Method used

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Examples

Experimental program
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Effect test

example 1

[0136]A polyethylene terephthalate film (produced by Mitsubishi Plastics, Inc., trade name: PET38 T-100) having a thickness of 38 μm was prepared for use as a base.

[0137]Next, a silicone resin (produced by Shin-Etsu Chemical Co., Ltd., trade name: KS847H), mainly composed of polydimethylsiloxane for the polyorganosiloxane-based compound, was coated onto the surface of the base and dried to obtain a polydimethylsiloxane layer (polyorganosiloxane layer) having a thickness of 100 nm.

[0138]Next, a silicon nitride (Si—N) film (inorganic material layer) was deposited on the polydimethylsiloxane layer by dynamic ion mixing method using a sputtering method.

[0139]The conditions of dynamic ion mixing method are indicated below.

[0140]Plasma-forming gas: Mixed gas of argon and nitrogen

[0141]Target: Silicon

[0142]Plasma-forming gas flow rates: argon: 100 cm3 / min (atmospheric pressure: 1.013 hPa, 25° C.), nitrogen: 60 cm3 / min (atmospheric pressure 1.013 hPa, 25° C.)

[0143](Radio Frequency Electrica...

example 2

[0155]A gas barrier film was produced in the same manner as Example 1 with the exception of using a mixed gas of argon and oxygen for the plasma-forming gas when forming the inorganic material layer, and depositing a silicon oxide (SiO2) film by setting the argon flow rate to 100 sccm and setting the oxygen flow rate to 30 sccm.

example 3

[0156]A gas barrier film was produced in the same manner as Example 1 with the exception of depositing an aluminum nitride (Al—N) film by using aluminum for the target when forming the inorganic material layer.

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Abstract

Disclosed is a gas barrier film, which demonstrates superior gas barrier properties and surface smoothness, demonstrates a high degree of adhesion between layers and is resistant to cracking when bent, and an electronic device provided therewith. A gas barrier film of the present invention has a base, and a polyorganosiloxane layer and an inorganic material layer sequentially provided on at least one side of the base, and the inorganic material layer is deposited by dynamic ion mixing method.

Description

[0001]This application is a 371 application of PCT / JP2010 / 001898, filed Mar. 17, 2010, which, in turn, claims priority of Japanese Patent Application No. 2009-083871, filed on Mar. 31, 2009.TECHNICAL FIELD[0002]The present invention relates to a gas barrier film and an electronic device provided with that gas barrier film.[0003]The present application claims priority on the basis of Japanese Patent Application No. 2009-083871 filed in Japan on Mar. 31, 2009, the contents of which are incorporated herein by reference.BACKGROUND ART[0004]Transparent resin films have been attempted to be used in recent years as an alternative to glass substrates in applications such as image display elements or solar cell modules accompanying requirements for increased flexibility, lighter weight and reduced thickness.[0005]FIG. 5 is a schematic cross-sectional view showing an example of a solar cell module in which a transparent resin film is used as a protective sheet.[0006]This solar cell module 200...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L31/0216B32B5/00B32B27/06C08J7/043C08J7/048
CPCB32B27/06Y10T428/265C23C14/0652C23C14/08C23C14/3485Y10T428/263C08J7/045C23C14/024C23C14/345C08J2483/04C08J2367/02B32B33/00Y02E10/50H01L31/049C23C14/0641B32B9/007B32B9/045B32B15/08B32B27/08B32B27/28B32B27/281B32B27/283B32B27/286B32B27/288B32B27/308B32B27/32B32B27/34B32B27/36B32B27/365B32B2307/306B32B2307/412B32B2307/538B32B2307/712B32B2307/7242B32B2307/7246B32B2307/732B32B2457/00Y10T428/31663C08J7/0423C08J7/048C08J7/043
Inventor HOSHI, SHINICHIOKUJI, SHIGETO
Owner LINTEC CORP
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