Thin film ferroelectric light modulators

Abstract

A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator. In one version of the invention, the functions of both the second (top) electrically conductive layer and dielectric stack are fulfilled by using a semi-transparent conducting film. In another version, the functions of both the first (bottom) electrically conductive layer and dielectric stack are also fulfilled by using a, preferably, highly reflective conducting film.

Description

1. Technical FieldThe invention is in the field of electro-optic modulators of light wave intensity. More particularly, the invention relates to using thin film ferroelectric materials in a Fabry-Perot etalon to provide polarization-insensitive modulation of reflected and transmitted light at high modulation frequencies.2. Related ArtA number of methods or devices have been proposed to modulate the intensity of light. Most of them are not suitable for producing useful large-scale hybrid, integrated-with-silicon, circuits. The closest related art to the present invention uses ferroelectric materials whose indices of refraction change when an electric field is applied, but at a different rate for different light polarizations. That is, the ordinary and the extraordinary index change at a different rate with applied voltage, i.e., a field induced birefringence occurs. This structure is similar to an asymmetric Fabry-Perot etalon with a back surface reflecting electrode and a front surf...

AI Technical Summary

Problems solved by technology

Most of them are not suitable for producing useful large-scale hybrid, integrated-with-silicon, circuits.

All of these approaches have one major disadvantage.

Manufacturing may be costly and the need to make electrical contact to a vertical stack of electrodes may make it hard to produce as a hybrid integrated circuit.

Moreover, this device seems to be limited in useable angles of incidence.

This device can overcome the limitation on light wavelengths, but liquid crystal response times are inherently slow and PLZT was also proposed.

In this case, multiple reflections occur within the ITO layer itself and the overall structure is considerably more complicated than the case for a classical Fabry-Perot etalon.

This selection cannot always be accomplished in practice.

However, fortuitously, an ITO-PLZT-platinum combination produces a low enough minimum reflectance to be useful.

However, when a useful thickness of platinum is used for the bottom mirror / electrode, the light will be absorbed by it.)

Images