Catadioptric projection systems

Inactive Publication Date: 2006-09-19
NIKON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0026]Embodiments of the invention in which the reticle and wafer are in parallel planes or are along the same axis simplify wa

Problems solved by technology

Purely refractive projection systems are inadequate alat ultraviolet wavelengths.
Unfortunately, combining optical elements of synthetic fused quartz and fluorite is ineffective in eliminating chromatic aberration because the Abbe numbers of synthetic quartz and fluorite are not sufficiently different.
Therefore, refractive optical systems for wavelengths less than about 300 nm suffer from unacceptable levels of chromatic aberration.
The refractive index of fluorite changes relatively rapidly with temperature and fluorite polishes poorly.
Therefore, most ultraviolet optical systems do not use fluorite, and thus exhibit uncorrected chromatic aberration.
Because the manufacture of precision aspheric surfaces is extremely difficult, a reflective projection system using an aspheric mirror is prohibitively expensive.
However, because it is symmetric, the optical system has a short working distance.
In addition, because it is difficult with this system to separate the incident light beam and the reflected light beam, a beamsplitter is required.
Consequently

Method used

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Examples

Experimental program
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Example

[0039]FIG. 2 shows a first example embodiment of the invention. The first example embodiment provides a catadioptric projection system that projects a demagnified image of a circuit pattern from an illuminated region 221 (FIG. 2(a)) of a reticle R onto a semiconductor wafer W. The illumination region 221 is illuminated by an illumination optical system, not shown in FIG. 2. Such a projection system can project a pattern onto other substrates as well, such as a glass panel for a liquid crystal display, and it is apparent that the invention is not limited to systems for projecting circuit patterns onto semiconductor wafers. (Thus, it will be understood that “wafer” as used herein encompasses any of various appropriate substrates onto which an image, defined by the reticle R, can be projected.) In the example embodiments presented herein, the optical projection systems are intended for use at wavelengths around 193 nm but it will be apparent that the invention is also applicable to oth...

Example

[0044]FIG. 3 shows the optical system of the first embodiment in detail. For clarity, the folded optical path caused by the concave mirror M1 and the turning mirror M2 has been unfolded by inserting virtual flat mirrors immediately behind the concave mirrors M1 and the turning mirror M2. These virtual mirrors are not actually part of the first example embodiment but serve to simplify FIG. 3. Such an unfolded representation of a catadioptric optical system will be readily understood by persons of ordinary skill in the art.

[0045]Table 1 contains specifications for the first example embodiment. In Table 1, the first column lists surface numbers, numbered from the reticle R to the wafer W. Surface numbers relevant to this discussion are specifically denoted in FIG. 3. The second, third, and fourth columns of Table 1 list the radii of curvature of the optical surfaces (“r”), surface separations (“d”) along the optical axis, and the lens material, respectively. The fifth column indicates ...

Example

[0054]A second example embodiment of the invention is shown in FIG. 5. The optical projection system of FIG. 5 is similar to that of the embodiment of FIG. 2. Light from an illuminated region 321 (FIG. 3(a)) of a reticle R is directed to, beginning nearest the reticle R and along an optical axis 310, a single-pass lens group A1 comprising a first negative subgroup A11, a positive subgroup A12 and a second negative subgroup A13. After the second negative subgroup A13, a turning mirror MOM0 reflects the light along an optical axis 311 of a double-pass lens group A2 including a concave mirror MlM1. Light is transmitted by the double-pass lens group A2 and is reflected by the concave mirror M1 back through the double-pass lens group A2 to a turning mirror M2. An intermediate image of the illuminated region 321 is formed near the turning mirror M2.

[0055]The turning mirror M2 directs the light from the illumi-natedilluminated region of the reticle R along the optical axis 310 which is an ...

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PUM

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Abstract

Catadioptric projection systems are disclosed for projecting an illuminated region of a reticle onto a corresponding region on a substrate. The systems are preferably used with ultraviolet light sources (e.g., 193 nm). The systems comprise a first imaging system, a concave mirror, and a second imaging system. The first imaging system comprises a single-pass lens group and a double-pass lens group. The single-pass lens group comprises a first negative subgroup, a positive subgroup, and a second negative subgroup. Light from the illuminated region of the reticle passes through the single-pass lens group and the double-pass lens group, and reflects from the concave mirror to pass back through the double-pass lens group to form an intermediate image of the illuminated region of the reticle. The light is then directed to the second imaging system that re-images the illuminated region of the reticle on the substrate. Alternatively, light from the single-pass lens group is reflected by a turning mirror to the double-pass lens group, wherein the light returning through the double-pass lens group continues directly to the second imaging system.

Description

[0001]This application claims the benefit of Japanese patent application no. 8-149903, filed May 20, 1996, and is a continuation in part of U.S. patent application Ser. No. 08 / 212,639, filed Mar. 10, 1994 and which issued as U.S. Pat. No. 5,636,066, U.S. patent application Ser. No. 08 / 628,165, filed Apr. 25, 1996 and which issued as U.S. Pat. No. 5,689,377, U.S. patent application Ser. No. 08 / 552,453, filed Nov. 3, 1995 and which issued as U.S. Pat. No. 5,691,802, U.S. patent application Ser. No. 08 / 429,970, filed Apr. 27, 1995 and which issued as U.S. Pat. No. 5,808,805 and is currently pending as U.S. reissue application Ser. No. 09 / 764,157, U.S. patent application Ser. No. 08 / 515,631, filed Aug. 16, 1995 and which issued as U.S. Pat. No. 5,861,997 and is currently pending as U.S. reissue application Ser. No. 09 / 766,486, which correspondingly claim priority under 35 U.S.C. Section 119(a)-(d) to Japanese patent application no. 5-051718, filed Mar. 12, 1993, Japanese patent applicat...

Claims

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Application Information

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IPC IPC(8): G02B17/08G03B27/42G02B13/24G02B27/18G03F7/20H01L21/027
CPCG02B17/08G02B17/0892G03F7/70225G03F7/70241G03F7/70275G03F7/70358
Inventor TAKAHASHI, TOMOWAKI
Owner NIKON CORP
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