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Method for preparing InGaAlN thin film on silicon bulk

A technology of indium gallium aluminum nitride and silicon substrate, applied in semiconductor/solid-state device manufacturing, lasers, electrical components, etc., can solve the problems of lattice mismatch, thermal expansion coefficient mismatch, low luminous efficiency of devices, etc. quality, the effect of reducing dislocation density

Inactive Publication Date: 2007-09-19
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large lattice mismatch and thermal expansion coefficient mismatch between the silicon substrate and the InGaAlN material, the InGaAlN material grown on the silicon substrate generally contains a high dislocation density.
Dislocations in InGaAlN materials can act as non-radiative recombination centers, so devices made of InGaAlN materials with high dislocation density have low luminous efficiency

Method used

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  • Method for preparing InGaAlN thin film on silicon bulk
  • Method for preparing InGaAlN thin film on silicon bulk
  • Method for preparing InGaAlN thin film on silicon bulk

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Clean a silicon (111) substrate 1, put it into the reaction chamber of a metal-organic chemical vapor deposition equipment, first heat-treat the surface of the substrate 1 with hydrogen at high temperature for 5 minutes, then lower the temperature to 720°C, and pass A metal magnesium mask layer 3 of 0.5 monoatomic layer was deposited by adding magnesium dicene. Next, a metal aluminum thin layer and an aluminum nitride buffer layer, namely the metal transition layer 2 , were sequentially deposited at 720° C., and finally the temperature was raised to 1050° C. to deposit a 3-micron gallium nitride layer, that is, the indium gallium aluminum nitride semiconductor layer 4 .

Embodiment 2

[0032] Clean a silicon (111) substrate 1, put it into the reaction chamber of a metal-organic chemical vapor deposition equipment, first heat-treat the surface of the substrate 1 with hydrogen at high temperature for 5 minutes, and then lower the temperature to 900°C to deposit a The metal titanium thin layer is the metal transition layer 2 . Next, a monoatomic layer of metal magnesium mask layer 3 is deposited on the titanium layer at 880°C. Still at 880° C., deposit an aluminum nitride buffer layer, and finally raise the temperature to 1030° C. to deposit a 3-micron gallium nitride layer, that is, an indium gallium aluminum nitride semiconductor layer 4 .

Embodiment 3

[0034] Clean a silicon (111) substrate 1, put it into the reaction chamber of a metal-organic chemical vapor deposition equipment, first heat-treat the surface of the substrate 1 with hydrogen at high temperature for 5 minutes, and then lower the temperature to 800°C to deposit a The thin layer of aluminum-titanium alloy is the metal transition layer 2 . Keep 800° C. to deposit an aluminum nitride buffer layer on the aluminum layer, and then increase the temperature to 1030° C. to deposit a 0.5-micron first gallium nitride layer, that is, the first InGaAlN semiconductor layer 5 on the aluminum nitride layer. Next, two monoatomic layers of magnesium mask layers 3 are deposited on the first GaN layer at the same temperature. Then, a 2-micron-thick silicon-doped GaN layer, 5 periods of InGaN / GaN multiquantum wells and a 0.1-micron-thick Mg-doped GaN layer, that is, the second InGaAlN semiconductor layer 4 are deposited in sequence.

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Abstract

This invention discloses one gallium aluminium nitride film process method on silicon underlay, which comprises the following steps: leading magnesium metal for online zone mask film, that is, forming one layer of mask film or metal transition layer; then forming one metal transition layer or magnesium mask layer; finally forming one layer of gallium aluminium nitride semi-conductor film; firstly forming one layer of metal transition layer on underlay and then forming the semi-conductor layer and magnesium mask layer and second semi-conductor layer. This invention can reduce error position intensity of gallium aluminium nitride materials and improve crystal quality

Description

technical field [0001] The invention relates to semiconductor materials, in particular to a method for preparing an indium gallium aluminum nitrogen thin film on a silicon substrate. Background technique: [0002] InGaAlN (In x Ga y Al 1-x-y N, 0<=x<=1, 0<=y<=1) is a preferred material system for preparing short-wavelength light-emitting devices. In recent years, many novel light-emitting devices have been manufactured with InGaAlN materials, such as blue, green, and white light-emitting diodes, purple semiconductor lasers, and so on. At the same time, InGaAlN material is also a good material for preparing many high-performance electronic devices. In the prior art, methods for preparing InGaAlN materials on sapphire substrates and silicon carbide substrates have been relatively mature. According to these disclosed technologies, high-quality InGaAlN materials can already be prepared. However, silicon carbide substrates are very expensive, and the growth of I...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/20H01S5/00
CPCH01L21/02491H01L21/02505H01L21/02502H01L21/0254H01L33/007H01L21/02381H01L21/02458H01L21/0262H01L21/02642H01L21/20
Inventor 江风益王立方文卿
Owner LATTICE POWER (JIANGXI) CORP