Method of preparing ZnO:Zr transparent conductive film by radio frequency magnetic controlled sputtering method
A transparent conductive thin film, radio frequency magnetron sputtering technology, applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problem of expensive equipment, difficult large-area film formation, film formation uniformity and Poor photoelectric performance and other problems, to achieve the effect of improved photoelectric performance, simple and cheap equipment, and easy large-area film formation
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Embodiment 1
[0020] (1) ZnO and ZrO with a purity of 99.99WT% 2 The powder is fully mixed with a ball mill at a weight ratio of 95:5; then, the fully mixed powder is extruded under a pressure of 60 MPa for 15 minutes to form it, and then sent to a high-temperature sintering furnace for sintering at 1300°C in air for 360 minutes. Get ZnO:Zr target.
[0021] (2) Select #7059 glass as the substrate, and clean the substrate with ultrasonic waves and acetone in sequence. Send the target material and cleaned substrate of step (1) into the radio frequency magnetron sputtering apparatus, and the basic vacuum of the sputtering apparatus is 5.0×10 -4 Pa, the sputtering gas is argon with a purity of 99.99%, the sputtering pressure is adjusted to 0.6Pa, the sputtering power is 125W, the sputtering time is 6 minutes, and the film thickness is 170nm to prepare a thin film. The resistivity of the film is 9.76×10 -3 Ω cm.
[0022] The XRD image of the prepared ZnO:Zr film is shown in Figure 1. It can ...
Embodiment 2
[0024] As described in Example 1, the difference is that the sputtering time in step (2) is 16 minutes, and the film thickness is 475 nm. The resistivity of the film is 2.07×10 -3 Ω cm. The XRD image of the prepared ZnO:Zr film is shown in Figure 2. Compared with Figure 1, the intensity of the ZnO (002) peak is significantly enhanced, indicating that with the increase of film thickness, the grains of the film are larger and the crystallization is more severe. powerful. The resistivity of the film is also significantly reduced.
Embodiment 3
[0026] As described in Example 1, the difference is that the sputtering time in step (2) is 20 minutes, and the film thickness is 600 nm. The resistivity of the film is 4.24×10 -3 Ω cm. The XRD image of the prepared ZnO:Zr film is shown in Figure 3. Compared with Figure 2, the intensity of the ZnO (002) peak has little change, indicating that when the film thickness increases to a certain extent, the grain size and crystal degree tends to be stable. The resistivity of the film increases.
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