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Method for conventing non-crystalline silicon into polycrystal silicon

A technology of amorphous silicon and polycrystalline silicon, which is used in the field of converting amorphous silicon to polycrystalline silicon, which can solve the problems of laser stability sensitivity, reducing the yield and impact of semiconductor components, etc.

Inactive Publication Date: 2008-03-05
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the a-Si precursor material plated by chemical vapor deposition (CVD, Chemical Vapor Deposition) has a very narrow process window (10-20mJ / cm2) when it undergoes ELA (Excimer Laser Annealing). 2 ), however, the a-Si precursor is very sensitive to the stability of the laser. As long as the laser stability is not good, the quality uniformity of polysilicon will be poor, which will affect or reduce the yield of the semiconductor components produced.

Method used

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  • Method for conventing non-crystalline silicon into polycrystal silicon
  • Method for conventing non-crystalline silicon into polycrystal silicon
  • Method for conventing non-crystalline silicon into polycrystal silicon

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Embodiment

[0015] Example: Argon Doping of Amorphous Silicon Substrates

[0016] In this embodiment, an argon doping process is performed on an amorphous silicon substrate before excimer laser conversion into polysilicon.

[0017] The top gate structure of N-type and P-type metal oxide semiconductor field effect transistors (MOSFETs) is fabricated on a glass substrate. At 430°C, use plasma-assisted chemical vapor deposition (PECVD) to deposit a layer of a-Si with a thickness of 2000 Ȧ as a buffer layer, and then deposit a layer of a-Si with a thickness of 500 Ȧ to prepare for excimer Laser annealing (ELA).

[0018] Prior to ELA, a dehydrogenation reaction was performed at 480° C. for 10 minutes under nitrogen flow (nitrogen now) to generate native oxides. Argon atom doping (Argon implantation) was performed on the a-Si precursor with a pulse duration of 30 ns and a scan overlap of 95%. In addition to patterning the polysilicon layer using the first photolithography plate, ion implanta...

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Abstract

The present invention relates to a method for converting amorphous silicon into polysilicon. It mainly includes the following steps: providing an amorphous silicon base plate, making said amorphous silicon base plate undergo the process of inert gas atom doping treatment, heating the surface of said amorphous silicon base plate to make a heat treatment process or thermal program treatment process.

Description

technical field [0001] The present invention relates to a method for converting amorphous silicon (amorphous silicon) into polysilicon (poly-silicon). Background technique [0002] At present, semiconductor technology is mainly based on the processing of amorphous silicon, which has the advantages of relatively simple process, suitable for large-scale manufacturing, and low cost. However, the electron movement rate of the semiconductor element made of amorphous silicon is slow, which gradually cannot meet the high-speed electron movement rate required after the semiconductor element is miniaturized. Therefore, the new technology "Low Temperature Polysilicon" (LTPS) came into being. At present, the more significant application is in the TFT-LCD industry. [0003] The biggest difference from the original a-SiTFT-LCD is that the transistors of LTPSTFT-LCD need to undergo further excimer laser annealing (ELA, excimer laser annealing) process steps to convert the amorphous silic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/324H01L21/477H01L21/822G02F1/13C30B28/02
Inventor 张茂益许建宙陈明炎吕明仁
Owner AU OPTRONICS CORP