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Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system

A micro-electro-mechanical system and giant magneto-impedance technology, applied in the field of sensors, can solve the problems of fragile wires and thin strips, welding of wires and thin strips, difficulty in installation, etc., and achieve the effects of improved sensitivity, good repeatability, and low cost

Inactive Publication Date: 2008-03-05
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, wires and ribbons will encounter many problems in terms of miniaturization, repeatability of device performance, mass production, and matching with detection circuits, such as welding of wires and ribbons in circuits, difficulty in installation, wire and ribbons Thin strips are easily broken, etc.

Method used

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Embodiment Construction

[0029] Below in conjunction with embodiment further description.

[0030] Preparation method of the present invention, specifically:

[0031] (1) The double-sided oxidized silicon wafer substrate that has been cleaned and treated (ie, the A side and the B side) is positively resisted, the thickness of the photoresist is 5 μm, the drying temperature of the photoresist is 95 ° C, and the time is 30 minutes. ; After exposure and development on one side (side B), use BHF etching solution to etch the silicon dioxide at a temperature of 40°C, and then remove the photoresist to obtain the double-sided overlay alignment marks on the B side;

[0032] (2) Carry out the magnetic sensitive device preparation process on the other side of the silicon wafer (referred to as the A side), and the following are all carried out on the A side;

[0033] (3) Sputtering FeNi bottom layer, thickness 80-100nm;

[0034] (4) Shake the positive resist, the thickness of the photoresist is 15 μm, the phot...

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Abstract

This invention relates to a manufacturing method for a huge magnet impedance effect magnet-sensitive device based on micro-electromechanical system (MEMS), which applies MEMS technology to process a double-face oxidized silicon chip to get an aligned symbol carved in double faces so as to increase the aligned accuracy when exposing, applies a quasi-LIGA photo etching technology and micro plating to prepare a zigzag sandwich structure FeNi / Cu / FeNi soft magnet multiplayer membrane material, applies physical etching to remove the substrate to avoid the erosion brought with wet etching and offsets the huge magnet impedance effective curves by selecting suitable magnets to make the magnet-sensitive device to work in the linear zone.

Description

technical field [0001] The invention relates to a manufacturing method of a magnetic sensitive device, in particular to a manufacturing method of a giant magneto-impedance effect magnetic sensitive device based on a micro-electromechanical system. It belongs to the field of sensor technology. technical background [0002] With the rapid development of microelectronics technology, some new, miniaturized, high-performance, high-sensitivity and fast-response new magnetic sensors are needed to monitor the environment in automotive electronics, robotics, bioengineering, and automatic control. Surrounding parameters such as: magnetic field, speed, speed, displacement, angle, torque, etc. The magnetosensitive sensors currently being used or developed on the market include Hall effect sensors, anisotropic magnetoresistance (AMR) effect and giant magnetoresistance (GMR) effect sensors. Hall effect sensor is the most widely used magnetic sensor at present, which can be used for the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08G01R33/09G11B5/39B81C1/00
Inventor 周勇丁文曹莹陈吉安周志敏
Owner SHANGHAI JIAOTONG UNIV
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