Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method

A thermal evaporation method and ordered array technology, which is applied in the field of nanomaterials, can solve the problems of complex process of SiC nanowire ordered array and cannot be synthesized by direct reaction, and achieves low gas price, low cost, and simple and easy process. Effect

Inactive Publication Date: 2008-09-03
SHANGHAI JIAOTONG UNIV
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for synthesizing an ordered array of small-diameter single-crystal SiC nanowires by a thermal evaporation method, which can be simple Facile large-scale synthesis of ordered arrays of small-diameter single-crystal SiC nanofilaments at lower temperatures and on silicon substrates

Method used

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  • Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method
  • Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method

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Embodiment 1

[0028] The synthesis process is carried out in a simple horizontal quartz tube furnace. A ceramic boat containing 2g of ZnS powder and 3 clean silicon wafers is placed in the center of the tube furnace, and the carbon material is fixed in the quartz tube through sintering. side of entry. First, the temperature was raised to 900°C at a rate of 25°C / min, and then to a reaction temperature of 1100°C at a rate of 15°C / min. When the temperature reaches 250°C, argon gas with a gas flow rate of 5 l / h is introduced; at a reaction temperature of 1100°C, the gas flow rate in the chamber is maintained, and the reaction continues for 2 hours. After the reaction, the reaction product is taken out and placed on a silicon wafer A large number of ordered arrays of small-diameter single-crystal SiC nanowires were obtained on the surface.

Embodiment 2

[0030] The synthesis process is carried out in a simple horizontal quartz tube furnace. A ceramic boat containing 3g of ZnS powder and 5 clean silicon wafers is placed in the center of the tube furnace, and the carbon material is fixed in the quartz tube through sintering. side of entry. First, the temperature was raised to 900°C at a rate of 25°C / min, and then to a reaction temperature of 1100°C at a rate of 15°C / min. When the temperature reaches 250°C, the inert gas argon gas with a gas flow rate of 16 l / h is introduced; at a reaction temperature of 1100°C, the gas flow rate in the chamber is maintained, and the reaction continues for 3 hours. After the reaction is completed, the reaction product is taken out. A large number of small-diameter single-crystal SiC nanowire ordered arrays were obtained on the surface of the silicon wafer (see figure 1 ). It can be seen from the figure that a large number of SiC nanowire arrays arranged in an orderly manner are produced on the ...

Embodiment 3

[0032] The synthesis process is carried out in a simple horizontal quartz tube furnace. A ceramic boat containing 4g of ZnS powder and 4 clean silicon wafers is placed in the center of the tube furnace, and the carbon material is fixed in the quartz tube through sintering. side of entry. First, the temperature was raised to 900°C at a rate of 25°C / min, and then to a reaction temperature of 1100°C at a rate of 15°C / min. When the temperature reaches 250°C, the inert gas argon gas with a gas flow rate of 30 l / h is introduced; at a reaction temperature of 1100°C, the gas flow rate in the chamber is maintained, and the reaction continues for 4 hours. After the reaction is completed, the reaction product is taken out. A large number of ordered arrays of small-diameter single-crystal SiC nanowires were obtained on the surface of the silicon wafer.

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Abstract

This invention discloses a method for synthesizing oriented arrays of small-diameter monocrystalline SiC nanowires by thermal evaporation. The method utilizes silicon wafer as the reaction substrate as well as the silicon source, solid carbon material as the precursor, ZnS powder as the auxiliary material, and Ar as the protective gas as well as the carrier gas, and performs redox reaction to nucleate on the silicon wafer and then grow oriented arrays of small-diameter monocrystalline SiC nanowires. The method has such advantages as simple process, low cost, no environmental pollution, no flammable or dangeous raw material, low gas cost, high yield, and continuous operation.

Description

technical field [0001] The invention relates to a method in the technical field of nanomaterials, in particular to a method for synthesizing an ordered array of small-diameter single-crystal SiC nanowires by a thermal evaporation method. Background technique [0002] One-dimensional nano-semiconductor materials have gradually attracted people's interest due to their unique physical properties and special geometric structures. As a wide bandgap SiC nanowire, due to its high mechanical strength, high thermal conductivity, and excellent field emission properties, it shows good application potential in harsh environments such as high temperature and high frequency, especially in In terms of reinforcement and field emission properties of superhard materials, it is generally considered to be a semiconductor material with great potential. It is based on the above reasons that the research on one-dimensional nano-SiC nanowires has been widely carried out in various fields. A large...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B29/62C30B25/00C01B31/36
Inventor 牛俊杰王健农
Owner SHANGHAI JIAOTONG UNIV
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