Integrated photon crystal double waveguide back coupling fluid refractive index sensor
A refractive index sensor and reverse coupling technology, applied in the field of integrated optoelectronics, can solve the problems of high noise, inability to planar integration, and difficulty in practical use, and achieve the effect of high sensitivity characteristics
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Embodiment 1
[0030] The light source of the present invention can be integrated based on the fluid refractive index sensor structure of photonic crystal double waveguide reverse coupling effect, such as Figure 5 shown. Select Si-SiO 2 -SOI substrate wafer made of Si, in which SiO 2 The layer thickness is 2 μm, and the upper Si thickness is 220 nm. The connecting waveguide 56 and the 2-dimensional photonic crystal periodic hole structure 57 are fabricated on the uppermost Si plate 53 by electron beam exposure and dry etching, and a double waveguide structure 54, 55 is formed. Removal of a portion of SiO by selective wet etching 2 layer, leaving the SiO 2 The layer is the bridge support structure 52 . When the light field introduced by the connecting waveguide 56 passes through the through waveguide 54, due to the reverse coupling with the coupling waveguide 55, it will be observed at the output connecting waveguide image 3 The transmission spectrum shown, the frequency of the depres...
Embodiment 2
[0032] The light source of the present invention can be integrated based on the fluid refractive index sensor structure of photonic crystal double waveguide reverse coupling effect, such as Figure 6 shown. A substrate 61 of GaAs material is selected, and a 2 μm AlGaInP sacrificial layer and a 220 nm GaAs waveguide layer are grown thereon. Electron beam exposure and dry etching are used to fabricate a connecting waveguide 66 and a 2-dimensional photonic crystal periodic hole structure 67 on the uppermost GaAs slab 63 to form dual waveguide structures 64 and 65 . Part of the AlGaInP layer is removed by selective wet etching, and the remaining AlGaInP layer is the bridge support structure 62 . When the light field introduced by the connecting waveguide 66 passes through the through waveguide 64, due to the reverse coupling with the coupling waveguide 65, it will be observed at the output connecting waveguide image 3 The transmission spectrum shown, the frequency of the depres...
Embodiment 3
[0034] The light source of the present invention can be integrated based on the fluid refractive index sensor structure of photonic crystal double waveguide reverse coupling effect, such as Figure 7 shown. A substrate 71 of InP material is selected, and a 2 μm InGaAsP sacrificial layer and a 220 nm InP waveguide layer are grown thereon. The connecting waveguide 76 and the 2-dimensional photonic crystal periodic hole structure 77 are fabricated on the uppermost InP plate 73 by electron beam exposure and dry etching, and a double waveguide structure 74, 75 is formed. A part of the InGaAsP layer is removed by selective wet etching, and the remaining InGaAsP layer is the bridge support structure 72 . When the light field introduced by the connecting waveguide 76 passes through the through waveguide 74, due to the reverse coupling effect with the coupling waveguide 75, it will be observed at the output connecting waveguide image 3 The transmission spectrum shown, the frequency ...
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