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Method for preparing carbon nano-tube coextruded film on single-crystal silicon slice surface

A technology of carbon nanotube composite and single crystal silicon wafer, which is applied in the direction of surface coating liquid device, superimposed layer plating, metal material coating process, etc., can solve the problem that does not involve the improvement of carbon nanotube film performance And research, long heat treatment time, cumbersome self-assembled film process conditions and other issues, to achieve the effect of low cost, simple configuration, and good anti-wear performance

Inactive Publication Date: 2009-04-08
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process conditions of the self-assembled film prepared by this method are relatively cumbersome, and the heat treatment time is also long, and it does not involve the improvement and research of carbon nanotubes on the properties of the film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Carbon nanotubes: multi-walled carbon nanotubes produced by Shenzhen Nanoport Co., Ltd.

[0020] Pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool it naturally at room temperature, take out the monocrystalline silicon wafer, and repeat it with deionized water. Rinse, place in a desiccator to dry. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device and dried in an oven, and then immersed in the prepared mercaptosilane In the solution, let it stand for 6 hours, the molar concentration of the components of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.5mmol / L, the solvent is benzene solution; after taking it out, use chloroform, acetone, deionized After rinsing with water to remove organic substances ph...

Embodiment 2

[0026] Carbon nanotubes: single-walled carbon nanotubes, double-walled carbon nanotubes and multi-walled carbon nanotubes produced by Shenzhen Nano Harbor Co., Ltd.

[0027] Pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia with an electric furnace for 6 hours, cool it naturally at room temperature, take out the monocrystalline silicon wafer, and repeat it with deionized water Rinse, place in a desiccator to dry. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device and dried in an oven, and then immersed in the prepared mercaptosilane In the solution, let it stand for 8 hours, the molar concentration of the components of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.1mmol / L, the solvent is benzene solution; after taking it out, use chloroform, aceto...

Embodiment 3

[0032] Carbon nanotubes: single-walled carbon nanotubes, double-walled carbon nanotubes and multi-walled carbon nanotubes produced by Shenzhen Nano Harbor Co., Ltd.

[0033] Pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool it naturally at room temperature, take out the monocrystalline silicon wafer, and repeat it with deionized water. Rinse, place in a desiccator to dry. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device and dried in an oven, and then immersed in the prepared mercaptosilane In the solution, let it stand for 7 hours, the molar concentration of the components of the mercaptosilane solution is: 3-mercaptopropyltrimethoxysilane 1.0mmol / L, and the solvent is benzene solution; after taking it out, wash it with acetone, c...

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PUM

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Abstract

The invention discloses a making method of composite film of carbon nanometer pipe on the surface of single-crystal silicon chip, which comprises the following steps: immersing base in the chloroazotic acid to heat 5-6h; washing through deionized water; placing in the hydroxylating solution; disposing for 1h under indoor temperature; cleaning; drying; immersing in the mercapto silane solution; stewing 6-8h; blowing through nitrogen; oxidizing mercapto into sulfonic group; placing base in the suspension of modified carbon nanometer pipe; stewing 2-24h under 20-60 deg.c for 2-24h; washing; drying through nitrogen; obtaining the product.

Description

technical field [0001] The invention relates to a method for preparing a carbon nanotube composite film, in particular to a method for preparing a sulfonic acid silane-rare earth modified carbon nanotube composite film on the surface of a single crystal silicon wafer. It belongs to the field of film preparation. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. Due to the advantages of high hardness, low cost and small surface roughness of silicon material, the application in MEMS has been paid more and more attention. However, silicon materials without surface treatment are highly brittle, and surface cracks are prone to delamination wear and brittle fracture under low tensile stress, which is difficult to meet the requirements of use. Therefore, surface modification technology is required to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C28/00B05D7/24B05D1/18C23C22/48
Inventor 程先华亓永李键顾勤林
Owner SHANGHAI JIAOTONG UNIV