Process for preparing nanometer zinc oxide precursor

A nano-zinc oxide and precursor technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems of high cost, expensive equipment, difficult mass production, etc., and achieve the effect of low cost, easy control of conditions, and simple operation

Inactive Publication Date: 2009-05-13
ANHUI UNIVERSITY OF ARCHITECTURE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Magnetron sputtering, plasma synthesis, thermal evaporation and metal oxidation, gas phase transport, etc. These methods often require expensive equipment, high cost, and are not easy to produce in large quantities

Method used

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  • Process for preparing nanometer zinc oxide precursor
  • Process for preparing nanometer zinc oxide precursor
  • Process for preparing nanometer zinc oxide precursor

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Add 4.0 g of anhydrous zinc chloride (30 mmol) into 10 mL of anhydrous methanol, stir until completely dissolved to form a saturated methanol solution A of zinc chloride; then add 10 mL of acetylacetone, and stir at room temperature for 0.5 to 24 h, Form colorless solution B; then add triethylamine dropwise to solution B while stirring to form colorless solution C, adjust the pH value of solution C to about 8, continue stirring for 2 hours; finally add colorless solution C to 10 times the solution volume In distilled water, crystals were precipitated immediately, left standing for 4 hours, suction filtered, washed with distilled water, and then dried at 60°C to obtain the nano-zinc oxide precursor of the present invention.

[0031] The infrared spectrum of the nano-zinc oxide precursor is as follows figure 1 shown.

[0032] Anneal the nano-zinc oxide precursor at 600°C for 4 hours to obtain a one-dimensional zinc oxide nanowire self-assembled by nanoparticles. The TEM ...

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Abstract

The invention discloses a making method of nanometer zinc oxide primer, which comprises the following steps: making saturated zinc chloride carbinol solution; adding acetylacetone to stir under indoor temperature for 0.5-24h; dripping trimethylamine to adjust pH value to 7.5-8.6; stirring continuously for 0.5-12h; adding large quantity of distill water to dilute; evolving crystal immediately; stewing 4-12h; sucking; drying naturally; obtaining the product.

Description

1. Technical field [0001] The invention relates to a preparation method of nanometer materials, in particular to a preparation method of nanometer zinc oxide, in particular to a preparation method of a nanometer zinc oxide precursor. 2. Background technology [0002] As a wide-bandgap semiconductor material with direct bandgap, nano-zinc oxide has a bandgap of 3.37eV at room temperature, and the exciton binding energy is as high as 60meV. The low threshold voltage can realize exciton emission at room temperature and generate near-ultraviolet The short-wave luminescence is used to prepare short-wave optoelectronic devices, such as ultraviolet detectors, ultraviolet lasers, vacuum fluorescent displays, and field emission displays. It is the most promising candidate material and has great development and application value. Therefore, its preparation has aroused great interest. At present, there are many methods for preparing nano-ZnO, and the commonly used physical methods inc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02
Inventor 胡寒梅邓崇海黄显怀
Owner ANHUI UNIVERSITY OF ARCHITECTURE
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