Near-ultraviolet or ultraviolet excited semiconductor luminous material and its preparing method

A fluorescent material, yellow-green light technology, applied in the direction of luminescent materials, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of unstable chemical and optical properties, difficult to control reaction conditions, expensive raw materials, etc., to achieve high chemical and optical The effect of stability, easy operation of production process, and improvement of luminous intensity

Inactive Publication Date: 2009-07-01
SHANGHAI NORMAL UNIVERSITY
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a semiconductor luminescent material excited by near-ultraviolet or ultraviolet light and its preparation method, so as to overcome the high price of raw materials, complicated preparation steps, difficult control of reaction conditions and the large particle size of the obtained material in the original method. Uniformity, chemical and optical properties are not stable enough, and the defects of low luminous efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Near-ultraviolet or ultraviolet excited semiconductor luminous material and its preparing method
  • Near-ultraviolet or ultraviolet excited semiconductor luminous material and its preparing method
  • Near-ultraviolet or ultraviolet excited semiconductor luminous material and its preparing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Weigh 9.7g ZnS and 0.6030g NaCl, add them to 50mL ethanol solution, stir in a water bath at 65°C for 10min, then ultrasonically disperse for 5min, keep heating in a water bath at 65°C and continue stirring for 30min, then distill the ethanol under reduced pressure at 70°C To obtain the precursor, put the above precursor in a muffle furnace for sintering at 850°C for 2 hours, and then grind it a little to obtain the target product.

Embodiment 2

[0042]Weigh 9.7g ZnS and 0.6042g LiCl.H20, add to 50mL ethanol solution, stir in 65℃ water bath for 10min, then ultrasonically disperse for 5min, keep stirring in 65℃ water bath for 30min, then distill under reduced pressure at 70℃ The ethanol was removed to obtain the precursor, and the above precursor was sintered in a muffle furnace at 850°C for 2 hours, and then ground slightly to obtain the target product.

Embodiment 3

[0044] Weigh 9.7g ZnS and 0.7455g KCl, add to 50mL ethanol solution, stir in 65°C water bath for 10min, then ultrasonically disperse for 5min, keep heating in 65°C water bath and continue stirring for 30min, then remove ethanol by distillation under reduced pressure at 70°C To obtain the precursor, put the above precursor in a muffle furnace for sintering at 850°C for 2 hours, and then grind it a little to obtain the target product.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor luminescent material excited by near-ultraviolet or purple light, which is composed of ZnO:Sx, My and 10-4≤x≤10-2, 0≤y≤0.2, wherein M is selected from lithium, sodium, An alkali metal element of potassium or a rare earth element of europium or terbium, and when M is sodium, it has a better luminous effect. It also discloses the preparation method of the luminescent material by a low-temperature liquid phase method combined with a high-temperature solid-phase method and the performance test results. The invention prepares fine and high-efficiency fluorescent powder materials under relatively simple process conditions, has strong absorption in the long-wave ultraviolet and blue visible light regions of 370-440nm, and has strong emission in 450-600nm. It can be used in yellow-green light-emitting devices (LEDs), laser diodes (LDs), etc.

Description

technical field [0001] The invention belongs to the field of luminescent materials, and more specifically relates to the field of semiconductor luminescent materials. Background technique [0002] In recent years, with the wide application of various functional materials, the research on the luminescent properties of materials has been deepened. At the same time, due to the most potential of yellow-green light-emitting devices (LEDs), laser diodes (LDs), vacuum fluorescent displays (VFDs) and recent new developments The huge market demand such as field emission flat panel displays (FEDs) has promoted the research on III-V and II-VI semiconductor materials. The unique optical properties of nano-semiconductor materials make them possible to have new potential applications in the field of optoelectronics, and become an important branch of research in the field of material luminescence. ZnO is an important semiconductor material. It is not easy to be oxidized in the atmosphere ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/56C09K11/84H01L51/54G09F13/20
Inventor 余锡宾周平乐
Owner SHANGHAI NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap