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Near infrared organic electroluminescent materials and devices and method for fabricating the devices

An electroluminescent material and electroluminescent device technology, applied in the directions of luminescent materials, electroluminescent light sources, chemical instruments and methods, etc., can solve the problem that the performance of infrared organic light-emitting devices does not meet the application requirements, and achieve easy processing and preparation. The process is simple and the effect of improving the luminous intensity

Inactive Publication Date: 2009-07-29
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the performance of infrared organic light-emitting devices prepared with the current material system is far from meeting the application requirements. It is urgent to develop a new infrared organic electroluminescent material system to provide materials for the application of organic electroluminescent devices in optical fiber communication.

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  • Near infrared organic electroluminescent materials and devices and method for fabricating the devices
  • Near infrared organic electroluminescent materials and devices and method for fabricating the devices
  • Near infrared organic electroluminescent materials and devices and method for fabricating the devices

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Embodiment 1

[0034] First, the ITO on the ITO glass is photoetched into electrodes with a width of 5 mm and a length of 30 mm, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and immediately spin-coated a layer of PEDOT:PSS conductive polymer on it , put it in an oven and dry at 110°C for 30 minutes to remove moisture, and the thickness of the PEDOT:PSS film is about 50 nanometers. A chloroform solution of infrared dye ADS830AT doped with polyvinyl carbazole (PVK) and cadmium selenide / cadmium sulfide (CdSe / CdS) nanoparticles was spin-coated on PEDOT:PSS to obtain a luminescent layer with a thickness of 100 nm. Then transfer it to the vacuum coating system until the vacuum degree reaches 1-5×10 -1 Pascal deposited 200nm-thick metal Al on the light-emitting layer to prepare an infrared organic electroluminescent device with a structure of ITO / / PEDOT:PSS / / ADS830AT:CdSe / CdS:PVK / / Al. Wherein the evaporation rate of the Al electrode is controlled at 5 nanometers per...

Embodiment 2

[0036] First, the ITO on the ITO glass is photoetched into electrodes with a width of 5 mm and a length of 30 mm, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and immediately spin-coated a layer of PEDOT:PSS conductive polymer on it , put it in an oven and dry at 110°C for 30 minutes to remove moisture, and the thickness of the PEDOT:PSS film is about 50 nanometers. A chloroform solution of polyvinylcarbazole (PVK) blended with infrared dye ADS830AT doped with cadmium telluride (CdTe) nanoparticles was spin-coated on PEDOT:PSS to obtain a luminescent layer with a thickness of 100 nanometers. Then transfer it to the vacuum coating system until the vacuum degree reaches 1-5×10 -4 At Pascal, 200nm-thick metal Al was vapor-deposited on the light-emitting layer to prepare an infrared organic electroluminescent device with a structure of ITO / / PEDOT:PSS / / ADS830AT:PVK-CdTe / / Al, wherein the evaporation rate of the Al electrode Controlled at 5 nanometers...

Embodiment 3

[0038] First, the ITO on the ITO glass is photoetched into electrodes with a width of 5 mm and a length of 30 mm, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and immediately spin-coated a layer of PEDOT:PSS conductive polymer on it , put it in an oven and dry at 110°C for 30 minutes to remove moisture, and the thickness of the PEDOT:PSS film is about 50 nanometers. A chloroform solution of infrared dye ADS830AT doped with polyvinyl carbazole (PVK) and cadmium selenide / cadmium sulfide (CdSe / CdS) nanoparticles was spin-coated on PEDOT:PSS to obtain a luminescent layer with a thickness of 100 nm. Then transfer it to the vacuum coating system until the vacuum degree reaches 1-5×10 -4 At Pascal, 200nm-thick metal Al was vapor-deposited on the light-emitting layer to prepare an infrared light with a structure of ITO / / PEDOT:PSS / / ADS830AT:CdSe / CdS:PVK (1:9:40, weight ratio) / / Al Organic electroluminescent devices. Wherein the evaporation rate of the A...

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Abstract

The invention belongs to a near-infrared organic electroluminescence material and a device and a preparation method thereof, and is characterized in that the near-infrared organic electroluminescence material is composed of infrared fluorescent dyes, II-VI semiconductor nanoparticles and conductive polymers. Composed of three-source blends, the semiconductor nanoparticles can be physically doped in the polymer, and can also be chemically compounded on the polymer. The electroluminescent device is prepared by a simple spin-coating method Yes, the device structure is indium tin oxide ITO / / PEDOT:PSS / / polymer light-emitting layer / / metal cathode. The prepared device is driven by a direct current voltage, emits good near-infrared luminescence under different voltages and different doping concentrations, and the central wavelength of light emission is 890 nanometers. The voltage when the intensity is 1 nanowatt), the maximum luminous intensity can reach 115 nanowatts. The prepared infrared organic light-emitting device has the characteristics of simple structure, low processing technology, large voltage adaptability range and stable spectrum.

Description

technical field [0001] The invention relates to a near-infrared organic electroluminescence material, a device and a preparation method of the device. Background technique [0002] Photonics has always been fundamental to driving the development of communication technology, but within a decade, existing technologies and devices will not be able to meet the requirements of future applications. In order to solve the above problems, countries all over the world are competing to develop new photonic materials and high-performance photonic devices to meet the requirements of ultra-fast and large-capacity information processing in the future. It is agreed that future optical components should have the characteristics of high integration and low processing cost . Recent advances in organic materials and related optoelectronic devices have demonstrated the potential of organic materials for low processing costs and multifunctionality required for communication applications due to t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/06H05B33/14
Inventor 马东阁宣宇游汉钱刚王植源
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI