III nitride semi-conductor material and growing method thereof

Abstract

The invention discloses a semiconductor material for nitride of group III and its growing directions, which belongs to the field of semiconductor technology. The said method is composed of: forming a heat-resistant mask layer on the semiconductor substrate; growing the epilayer homogeneous with the said substrate on the said heat-resistant mask layer by epitaxial method; oxidize the said semiconductor into the oxidation furnace and eliminate the heat-resistant mask to form impending pattern homogeneous with the said substrate; Taking the said impending pattern as the base, growing the epitaxis of the nitride of group III to form the semiconductor material for nitride of group III, which comprises a substrate, impending pattern on the base of the substrate formed by epitaxial technology and the epitaxis of the nitride of group III on the impending pattern by epitaxial technology of the nitride of group III. The invention lowers the growing cost and reduces the stress between growing-finishing grown film and substrate through the impending pattern, thus to grow flawless thick film.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a Group III nitride semiconductor material and a growth method thereof. Background technique [0002] Aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN) and their ternary or quaternary alloys are usually called III-nitrides. At present, the epitaxial growth of III-nitrides has not yet been developed. Available mature and stable commercial homoepitaxial substrates. Products based on group III nitrides, such as blue and green light emitting diodes (LED, Light Emitting Diode), high electron mobility transistors (HEMT, High Electron Mobility Transistor), etc., are all realized through heteroepitaxy. At present, the general heterogeneous substrates of III-nitrides include sapphire (Sapphire), silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), etc. III-nitrides and their lattice and thermal mismatch It inevitably leads to high-density crystal defect...

AI Technical Summary

Problems solved by technology

[0011] Although the etching lateral epitaxy method avoids the disadvantages of the mask, it is very difficult to etch on chemically and physically corrosion-resistant materials such as sapphire and silicon carbide, which leads to increased manufacturing costs and unsatisfactory results

For example: the depth of the pattern groove is very limited, and the inclination angle of the side wall of the groove is difficult to be vertical, which will lead to the failure of epitaxial growth in the later stage

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