Making method for organic thin film transistor

Abstract

The invention relates to a manufacturing method of an organic thin-film transistor, which is suitable for the fields of the display, the sensor, the radio frequency identification (RFID) of a label, etc. The organic thin-film transistor has the structure that a grid (102), a gate insulator layer (103), a source cathode (104), a drain (105), a surface modification layer (106) and an organic semiconductor layer are arranged on a basement (101) in sequence. The preparation of the organic semiconductor layer can be realized via the transformation of pentacene derivatives to pentacene crystal. Through the adoption of the method, the organic semiconductor material is spin-coated and printed in a large area via solution. The manufacture of the organic thin-film transistor in large scale integration with a flexible substrate is accomplished, and the manufacture cost of the integrated circuit with the organic thin-film transistor can be reduced. Simultaneously, the surface modification layer is formed in the source cathode and the drain via OTS solution. The high mobility of the organic thin-film transistor, low leakage current and circuit working voltage can be further guaranteed.

Description

technical field [0001] The invention relates to a method for manufacturing an organic thin film transistor. Suitable for displays, sensors, radio frequency identification (RFID) tags and other fields. Background technique [0002] Flexible substrates, low cost, and low-temperature processes have greatly improved the opportunities for organic thin-film transistors (OTFTs) to be applied to large-area flexible electronic products. At the same time, organic integrated circuits can also be fabricated on cheap plastic substrates. , Form printed circuits, replace silicon chips, and can be mass-produced by printing, so that displays, sensors, smart cards, and radio frequency identification (RFID) tags can be brought to the market on a large scale. [0003] However, in the production process of large-scale integrated circuits of these flexible substrates, the steps of lithography process and vacuum preparation process (for example: PVD, CVD, etc.) are used many times, so it is diffi...

AI Technical Summary

Problems solved by technology

[0003] However, in the production process of large-scale integrated circuits of these flexible substrates, the steps of lithography process and vacuum preparation process (for example: PVD, CVD, etc.) are used many times, so it is difficult to reduce the cost of device preparation. In the past, roll-to-roll (R2R) was used for large-scale production, and the research on solution-prepared organic thin film transistors began. Most of them used polymer organics for printing and spin coating to reduce production costs, but it was difficult to achieve high mobility and stability. is also poor, making it difficult to improve device performance

However, pentacene and polythiophene oligomers with high mobility are insoluble and unstable, so it is difficult to directly use them for printing and spin coating to prepare transistors.

Images