Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing ITO nanometer line and gas sensor thereof

A gas sensor and nanowire technology, applied in the direction of material resistance, etc., to achieve high sensitivity, good gas sensitivity characteristics, and reduce the cost of raw materials

Inactive Publication Date: 2008-06-18
HUNAN UNIV
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, gas sensors prepared with more promising ITO nanowires have not been reported so far.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing ITO nanometer line and gas sensor thereof
  • Method for preparing ITO nanometer line and gas sensor thereof
  • Method for preparing ITO nanometer line and gas sensor thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1: ITO nanowire preparation method:

[0043] (1) 5 nanometers thick gold film is deposited on the base substrate;

[0044] (2) After the powders of indium oxide, stannous oxide and graphite are fully mixed with a mass ratio of 1: 3.8: 0.8, the mixed powder is put into an alumina boat, and the substrate substrate is placed on the alumina boat;

[0045] (3) Put the alumina boat into the quartz tube, then put the quartz tube into the tube furnace, and then heat the tube furnace to 600°C for 1 minute;

[0046] (4) After the tube furnace is cooled to room temperature, the slightly yellow product-ITO nanowires are generated on the substrate;

[0047] During the above preparation process, the gas pressure in the quartz tube was 250 Pa, and a mixed gas of argon and oxygen was fed at a rate of 10 sccm at the same time, and the volume ratio of oxygen in the mixed gas was 5%.

[0048] The base substrate is an N-type silicon substrate, and the gold film is deposited by...

Embodiment 2

[0049] Embodiment 2: ITO nanowire preparation method:

[0050] (1) spraying a 1 micron thick gold film on the base substrate;

[0051] (2) After the powders of indium oxide, stannous oxide and graphite are fully mixed with a mass ratio of 1: 4.2: 1.2, the mixed powder is placed in an alumina boat, and the substrate substrate is placed on the alumina boat;

[0052] (3) Put the alumina boat into the quartz tube, then put the quartz tube into the tube furnace, then heat the tube furnace to 1200°C for 10 hours;

[0053] (4) After the tube furnace is cooled to room temperature, the slightly yellow product-ITO nanowires are generated on the substrate;

[0054] During the above preparation process, the air pressure in the quartz tube is 250-350 Pa, and at the same time, a mixed gas of nitrogen and oxygen is fed at a speed of 30 sccm, and the volume ratio of oxygen in the mixed gas is 20%. The base substrate is a P-type silicon substrate, and the gold film is deposited by sputtering...

Embodiment 3

[0055] Embodiment 3: the preparation of ITO nanowire gas sensor:

[0056] (1) ITO nanowires are uniformly dispersed in an ethanol solution to make a slurry;

[0057] (2) coating the slurry on a ceramic tube with two gold electrodes and covering the electrodes;

[0058] (3) drying or sintering, that is, heating to 50°C for 10 hours;

[0059] (4) Lead connection. The resulting product is aged for 24 hours.

[0060] The substrates of the two electrodes are realized by photolithography on the ceramic sheet.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method to prepare ITO nanometer lines and a method to prepare ITO gas sensors. The method to prepare ITO nanometer lines is as follows: a layer of gold film deposits on an underlayer; powdered indium oxide, stannous oxide and plumbago are mixed pro rata, and are arranged in a boat; the underlayer is also arranged on the boat to be heated and thermally insulated together with the mixture. The air pressure inside a silica tube in a heater is kept to be about 300 Pa, and gaseous mixture containing little oxygen is admitted in the silica tube; after the heater is cooled to the room temperature, yellowish products are generated on the underlayer. The method to prepare the sensors is that the nanameter lines are dispersed in the solution for about two hours with ultrasonic wave, and are dried; the sizing agent formed is applied on the ceramic tubes of two electrodes, and needs covering on the electrodes; then the sizing agent is dried or sintered, and is connected with a leading wire. The method to prepare the ITO nanometer lines has the advantages of simplicity, controllability, low cost, and that the materials have excellent gas sensitivity. The method to prepare the gas sensor has the advantages of short response time, short recovery time, stable nature, low noise, and high sensitivity; and the method is applicable for large-scale industrial production.

Description

technical field [0001] The invention relates to a preparation method of an ITO nanowire and a gas sensor thereof. Background technique [0002] The application of nanotechnology in the field of sensing is expected to improve sensitivity, miniaturize components and increase integration. Due to the large specific surface area of ​​nanomaterials, their electrical properties are very sensitive to surface adsorption. When external environmental factors change, they will quickly cause changes in the surface, interface ions, and electron transport, which will significantly affect their resistance. The change in resistance can be used to Made into a sensor, it is characterized by fast response, high sensitivity and good selectivity. At present, many gas sensors have adopted nanoparticle structure. They have large specific surface area, high surface activity, and are very sensitive to the surrounding environment. However, the resistance of the sensor is large, and it is easy to aggl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
Inventor 王太宏薛欣宇陈玉金聂棱王岩国万青邹炳锁许春梅张杰
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com