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Method for coating II-VI group semiconductor quantum dots by silicane

A semiconductor and quantum dot technology, applied in the field of silane-wrapped II-VI semiconductor quantum dots, can solve the problems of complicated steps, uncomfortable long-term detection, damage to biological cells, etc., to reduce photobleaching and maintain the effect of fluorescence characteristics

Active Publication Date: 2008-07-09
JIANGSU TIANCHENG BIOCHEM PROD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluorescence detection in and out of living organisms requires water-soluble quantum dots that are only soluble in non-polar solvents (such as chloroform, toluene, n-hexane, etc.). The MPA, MAA, and MUA water-soluble methods developed in recent years have all made quantum dots The fluorescence efficiency has decreased to a certain extent, and the synthesized water-soluble quantum dots are relatively unstable in the aqueous phase, especially in the biological buffer, and are prone to agglomeration and precipitation, etc., which are not suitable for long-term detection in vivo, and the quantum dots The toxicity precipitated from the surface of quantum dots after water dissolution is harmful to biological cells. After a certain metered ion concentration is exceeded in the solution, it will destroy biological cells, cause cell death, and make the detection fail.
A common method to prevent the precipitation of cadmium ions or selenium ions from the surface of quantum dots is to wrap quantum dots with silane. The thin silicon layer will not change the peak position of the emission spectrum of quantum dots, and can further stabilize quantum dots in aqueous solution. The precipitation of harmful ions is greatly reduced, but the existing silane encapsulation method has complicated steps, and the particle size of the final synthesized quantum dot particles is too large

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Example 1: Silane wrapping of CdSe quantum dots

[0022] 1 Preparation of CdSe quantum dots

[0023] (1) Preparation of raw materials: measure CdO and dissolve it in a mixed solution of oleic acid (OA) and octadecene (ODA) at high temperature (240°C-250°C) under argon atmosphere, measure Se powder and protect it under inert gas In the glove box, dissolve in trioctylphosphine (TOP) and ODE.

[0024] (2) Heat the cadmium source solution prepared in step (1) to 280° C., take the selenium source solution out of the glove box, and quickly inject it into the cadmium source solution.

[0025] (3) Cool down the temperature of the solution to 250° C. to grow quantum dots. CdSe quantum dots with different sizes were obtained at different reaction times.

[0026] (4) After the party should be finished, add chloroform, methanol or ethanol mixture to precipitate, centrifuge, and dissolve the wet precipitate in chloroform for storage.

[0027] 2 CdSe quantum dot inorganic package...

Embodiment 2

[0047] 1 Silane coating of CdTe quantum dots

[0048] (1) Preparation of raw materials: measure CdO and dissolve it in a mixed solution of oleic acid (OA) and octadecene (ODA) at high temperature (240°C-250°C) under argon atmosphere, measure Te powder and protect it under inert gas In the glove box, dissolve in trioctylphosphine (TOP) and ODE.

[0049] (2) Heat the cadmium source solution prepared in step (1) to 280° C., take the selenium source solution out of the glove box, and quickly inject it into the cadmium source solution.

[0050] (3) Cool down the temperature of the solution to 250° C. to grow quantum dots. CdTe quantum dots with different sizes were obtained at different reaction times.

[0051] (4) After the party should be finished, add chloroform, methanol or ethanol mixture to precipitate, centrifuge, and dissolve the wet precipitate in chloroform for storage.

[0052] 2 CdTe quantum dot inorganic package:

[0053] (1) Dissolve chemically pure S powder in OD...

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PUM

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Abstract

The invention relates to a method of silane enwrapping II-VI semiconductor quantum dots. The invention comprises the preparation of the II-VI semiconductor quantum dots, inorganic enwrapping and silane enwrapping. The silane enwrapping of the II-VI semiconductor quantum dots comprises the steps that: dissolving polyoxyethylene nonyl phenyl ether into cyclohexane to form stable reversed micellar solution, then, adding trichloromethane solution of the II-VI semiconductor quantum dots which are inorganically enwrapped into the reversed phase micellar solution of the step a, then, adding gamma-mercaptopropyltrimethoxysilane, regulating the pH value range to 8.0-10.0, adding ethyl orthosilicate, then, functionalizing, and lastly, obtaining the II-VI semiconductor quantum dots which are wrapped by the silane and functionalized. The invention increases the stability of the quantum dots in buffering liquid through controlling the thickness of the quantum dots silane layer, the fluorescence can be kept well, the photobleaching and the optical quenching effect of the quantum dots can be reduced, the surface functionalization decoration of the quantum dots can be realized through selecting different functionalized radical, the biological application basis is provided after the quantum dots are dissolved in water, and the quantum dots which are treated by the saline can be the first choice in the application of thebiological fluorescence labeling field.

Description

Technical field: [0001] The invention relates to a method for wrapping II-VI group semiconductor quantum dots with silane, in particular to a method for wrapping II-VI group semiconductor quantum dots with silane in inverse microemulsion micelles. Background technique: [0002] With the development of material preparation technology, people can make some semiconductor materials into nanocrystalline grains. If the size is smaller than or reaches its excitonic Bohr radius, it is called the quantum dot of the semiconductor material. Due to the quantum size effect, small size effect and surface effect of quantum dots, the physical and chemical properties of the original material change, such as light, magnetism, electricity, mechanics, etc., and the most widely used is the magical change of its optical properties. Cd(Zn)S, Cd(Zn)Se, Cd(Zn)Te and other group II-IV compound semiconductor quantum dots have special fluorescence emission characteristics, which are different from fluo...

Claims

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Application Information

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IPC IPC(8): C09K11/02
Inventor 宋振伟张建成沈悦陈丽霞尤陈霞颜浩俞本伟
Owner JIANGSU TIANCHENG BIOCHEM PROD
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