Continuous producing technique for ultra-high pure nitric acid

A pure nitric acid and process technology, applied in the technological field of continuous production of ultra-high-purity nitric acid, can solve the problems of difficult removal of impurities, impurity content cannot reach ultra-pure nitric acid, etc., and achieves low production cost, low impurity ion content, and high product purity. Effect

Active Publication Date: 2008-09-17
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Nitric acid with a concentration of more than 95% has high volatility and stability. Most of the impurities contained in it are nitrates with a high boiling point. They can be separated in the tower kettle during the rectification process, but

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  • Continuous producing technique for ultra-high pure nitric acid

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Embodiment 1

[0011] The technique of the continuous production of ultra-high-purity nitric acid of the present invention is as follows (see figure 1 ): first the industrial grade nitric acid (98%) raw material is mixed with the organosilicon polymer complexing agent that accounts for 0.5%~1% of nitric acid raw material weight 18-crown-6 ether in the preconditioner, Then filter through the microfiltration membrane in the microfilter under the operating pressure of 0.15MPa, and the filtrate enters the rectification tower, and the semi-finished product exiting the rectification tower is diluted with 18MΩ·cm ultrapure water in the dilution device, and is ready to be diluted After the end, use high-purity nitrogen to drive off free NO in the white blowing device 2 , the resulting semi-finished product enters the finished product receiver after being filtered by the nanofiltration membrane in the nanofilter under the operating pressure of 0.6MPa. In the present embodiment, the pressure selectio...

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Abstract

The invention relates to a process for continuously producing extra high purity nitric acid, which comprises the following steps: first, industrial grade 80-90% nitric acid raw material and double allyl 18-crown-6 ether organosilicon macromolecular complexing agent accounting for 0.2-2% of the weight of nitric acid raw material are mixed in a pretreater, then, the mixture is filtered by a micro-filtration membrane under a working pressure of 0.1-0.2 Mpa, the filtrate enters a rectification tower, and the semi-finished product going through the rectification tower is diluted by ultra pure water in a dilution device; after the dilution is finished, the dissociative NO2 is expelled by high pure nitrogen in a whitening device, and the obtained finished product is filtered by a nanometer filter membrane and enters a finished product receiver under the working pressure of 0.5-0.8 Mpa; wherein, the aperture of the micro filtration membrane is 0.2 to 0.8 Mu m, and the aperture of the nanometer filter membrane is 0.5 to 1.5 nm. In the prepared ultra high purity nitric acid, the content of single cation is lower than 1 ppb, the content of single anion is lower than 100 ppb, and the content of the dust particle larger than 0.5 Mu m is lower than 5 per milliliter. The production process for extra high purity nitric acid has the advantages of simple technique, low production costs, high purity of products, low content of impurity ions, and applicability for large-scale mass production.

Description

technical field [0001] The invention relates to an ultra-clean and high-purity chemical reagent, in particular to a process for continuous production of ultra-high-purity nitric acid. Ultra-high-purity nitric acid is mainly used in the microelectronics industry to manufacture large-scale integrated circuit semiconductor devices for cleaning and corrosion. Background technique [0002] Ultra-clean and high-purity chemical reagents, also known as microelectronic chemicals, are one of the indispensable key basic chemical materials in the microfabrication process of electronic technology. They are mainly used for chip cleaning and corrosion. Yield, electrical performance and reliability have a very significant impact. As the storage content of the chip (IC) continues to increase, the capacity is also increasing, so the oxide film on the chip surface becomes thinner. However, alkali metal impurities in microelectronic chemicals, such as sodium (Na), calcium (Ca) and other impur...

Claims

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Application Information

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IPC IPC(8): C01B21/46
Inventor 戈士勇
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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