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Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof

A solar cell and surface treatment technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as unstable texturing effect, easy to pollute the production environment, and difficulty in controlling the yield. Achieve the effect of improving photoelectric conversion efficiency, shortening process time and improving work efficiency

Active Publication Date: 2010-11-03
SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the monocrystalline silicon solar cell industry, the texturizing fluids being used mainly include: strong alkali (such as NaOH, KOH), buffer additives (including IPA, ethanol, sodium silicate, isopropanol, etc.). The main problems are: ①The effect of velvet making is unstable, and the yield is difficult to control; ②The size of the pyramid after velvet making is too large (10-15um) is not ideal; ③The process time is too long, generally takes 30min; ④IPA (isopropanol ) has strong volatility, high production cost, and is easy to pollute the production environment during long-term production

Method used

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  • Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof
  • Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] First add 94.0kg of deionized water into the dispersing pot, add 4kg of potassium hydroxide, 50ppm octylphenol polyoxyethylene ether, and 2kg of sodium silicate under stirring, stir for 20 minutes, make it completely dissolve, filter, and discharge to obtain the prepared fleece agent.

[0023] Take a P-type (100) crystal plane Czochralski monocrystalline silicon wafer, firstly carry out surface cleaning, then put the silicon wafer into the above-mentioned prepared texturizing agent, etch at 80°C for 20 minutes, and the etched silicon wafer is removed Rinse with ionized water to complete the surface treatment. Such as figure 1 It can be seen that a pyramid structure is formed on the surface of the silicon wafer with uniform size and high coverage.

Embodiment 2

[0025] First add 98.0kg deionized water into the dispersing pot, add 1.5kg sodium hydroxide, 1ppm nonylphenol polyoxyethylene ether, and 0.5kg sodium silicate under stirring, stir for 10 minutes to completely dissolve, filter, and discharge. Get velvet.

[0026] Take a P-type (100) crystal plane Czochralski monocrystalline silicon wafer, firstly carry out surface cleaning, then put the silicon wafer into the above-mentioned prepared texturizing agent, etch at 50°C for 60 minutes, and the etched silicon wafer is removed Rinse with ion water to complete the surface treatment.

Embodiment 3

[0028] First add 85.0kg of deionized water into the dispersing pot, add 10kg of potassium hydroxide, 200ppm nonylphenol polyoxyethylene ether, and 5kg of sodium silicate under stirring, stir for 30 minutes, make it completely dissolve, filter, and discharge to obtain the prepared fleece agent.

[0029] Take a P-type (100) crystal plane Czochralski monocrystalline silicon wafer, firstly carry out surface cleaning, then put the silicon wafer into the above-mentioned prepared texturizing agent, etch at 100°C for 2 minutes, and the etched silicon wafer is removed Rinse with ion water to complete the surface treatment.

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PUM

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Abstract

The invention relates to a napping agent used for treating the surfaces of monocrystalline silicon solar batteries and a production method thereof. The prescription of the napping agent comprises ingredients as follows: 1.5 percent to 10 percent of sodium hydroxide or potassium hydroxide, 1 ppm to 200 ppm of surface active agent, 0.5 percent to 5 percent of sodium silicate and 85.0 percent to 98.0 percent of de-ionized water. The production method comprises the steps as follows: the de-ionized water is firstly added into a dispersing boiler and stirred, simultaneously, the sodium hydroxide orthe potassium hydroxide, the surface active agent and the sodium silicate are added and stirred for 10 minutes to 30 minutes to realize complete dissolution, and then filtration and discharging are carried out. A unique prescription is used in the invention to prepare the napping agent and polyethenoxy ether series surface active agents are adopted to reduce the surface tension of the napping agent, thus realizing slow release type even air bubble releasing technique and ensuring that the sides of all pyramids after napping are shortened with quite even distribution within the surface. Even pyramid structures are generated on the surfaces of the solar batteries, thereby widening the specific surface area of light absorption and reducing loss of light reflection; therefore, the napping agent can be widely used for treating the surfaces of the monocrystalline silicon solar batteries.

Description

technical field [0001] The invention relates to a texture-making agent, in particular to a texture-making agent used for surface treatment of monocrystalline silicon solar cells and a manufacturing method thereof. Background technique [0002] Using the principle of anisotropic etching of silicon, a pyramid-like structure is formed on the surface of monocrystalline silicon solar cells, which can effectively reduce the reflectivity of sunlight and significantly improve the efficiency of converting solar energy into electrical energy. At present, in the monocrystalline silicon solar cell industry, the texturizing fluids being used mainly include: strong alkali (such as NaOH, KOH), buffer additives (including IPA, ethanol, sodium silicate, isopropanol, etc.), the presence of The main problems are: ①The effect of velvet making is unstable, and the yield is difficult to control; ②The size of the pyramid after velvet making is too large (10-15um) is not ideal; ③The process time is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L31/18
CPCY02P70/50
Inventor 顾奇赵佳吴国华
Owner SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
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