Single-face metallic waveguide Terahertz quantum cascaded laser and production method thereof

A technology of quantum cascade and fabrication method, applied in semiconductor lasers, lasers, phonon exciters, etc., can solve the problems of infeasible lasers, the substrate cannot act as a mode confinement layer, and it takes a long time to shorten the fabrication time. The effect of time, pollution reduction, and manufacturing process optimization

Active Publication Date: 2009-01-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

Since mid-infrared QCL and near-infrared and visible laser diodes all use traditional dielectric mode confinement to limit the direction of light radiation, this method is not feasible for lasers in the THz frequency band. The reasons are: 1. To make this method To be effective, the thickness of the waveguide cladding layer must be in the same order of magnitude as the wavelength of the radiated photo

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  • Single-face metallic waveguide Terahertz quantum cascaded laser and production method thereof
  • Single-face metallic waveguide Terahertz quantum cascaded laser and production method thereof
  • Single-face metallic waveguide Terahertz quantum cascaded laser and production method thereof

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[0020] See figure 1 The waveguide structure of the single-sided metal waveguide terahertz quantum cascade laser of the present invention mainly includes: a semi-insulating GaAs substrate 01, a GaAs buffer layer 02 grown on the semi-insulating GaAs substrate, and a GaAs buffer layer grown on the GaAs buffer layer. The upper N-type GaAs lower waveguide layer 03, the multiple quantum well cascade active area 04 grown on the lower waveguide layer and used to emit terahertz light, the multiple quantum well cascade active area grown on the multiple quantum well cascade active area and A reinforced auxiliary injection layer 05 for enhancing electrical injection of the multiple quantum well cascade active region, an N-type GaAs contact layer 06 grown on the reinforced auxiliary injection layer, and a metal waveguide grown on the contact layer Layer 07.

[0021] Wherein, the multiple quantum well cascade active region has multiple repetition periods, and there are multiple AlGaAs / GaAs alt...

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Abstract

The invention relates to a single-side metal waveguide terahertz quantum cascade laser and a preparation method thereof characterized by growing a GaAs buffer layer, a N type GaAs lower waveguide layer, a multiple quantum well cascade active region, an enhanced auxiliary implanted layer and a N type GaAs upper contact layer on the semiinsulating GaAs substrate by a gas source molecular beam epitaxy device, producing an upper waveguide (electrode) Au layer by means of lithography development and heat evaporation, then producing a ridge structure by means of lithography development and wet etching, furthermore producing an electrode by means of lithography development and heat evaporation, cleavaging a high quality die according to the design specification after rapid thermal anneal, finally finishing the encapsulation of the die.

Description

technical field [0001] The invention relates to a quantum cascade laser, in particular to a single-sided metal waveguide terahertz quantum cascade laser and a manufacturing method. Background technique [0002] Terahertz (THz) waves have great application value in national economy and national security, and THz radiation source is a key device for THz frequency band applications. Among the many ways to generate THz radiation, semiconductor-based all-solid-state THz quantum cascade laser (QCL) has become a research hotspot in this field due to its advantages of high energy conversion efficiency, small size, portability and easy integration. [0003] Although QCL is also a semiconductor laser, it is very different from traditional semiconductor lasers, mainly in that the emission wavelength of QCL is not limited by the energy gap of the material in the active region, because it is a unipolar device. The emission wavelength is determined by the energy level difference of discr...

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Application Information

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IPC IPC(8): H01S5/00H01S5/22H01S5/343H01L21/20H01L21/28
Inventor 曹俊诚黎华韩英军
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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