Passivation film of composite semiconductor silicon device and passivation generating process

Abstract

The invention relates to a passivation film of a compound type semiconductor silicon device and a passivation generating technology, which belong to the technical field of semiconductor production. The passivation film of the compound type semiconductor silicon device comprises an upper layer film and a lower layer film which are reserved on the section of a silicon base by a photoetching technology, wherein the upper layer film is a nitrogen enriched SiOxNy film, and the lower layer film is an oxygen enriched SiOxNy film. The generating technology comprises the steps: a compact lower oxygen enriched SiOxNy film layer is generated on the silicon base with the section by using a low-pressure chemical gas deposition method, and the stress of the compact lower oxygen enriched SiOxNy film layer is similar to that of silicon; N2O, SiH4 and NH3 are introduced in the same deposition furnace at high temperature of about 740 to 800 DEG C under the environment of 280 to 340 milliliters to grow a nitrogen enriched SiOxNy film layer, the stress of which is close to the stress of the lower oxygen enriched SiOxNy film layer; and after the compound film is finally formed, an SiOxNy compound film on the section of the silicon base is reserved by the photoetching technology. The invention has the advantages of thermal shock resistance, corrosion resistance, creep resistance, oxidation resistance, low expansion, good photoelectric property, and the like.

Description

Technical field: [0001] The invention relates to a compound semiconductor silicon device passivation film and a passivation production process, belonging to the technical field of semiconductor production, in particular to a passivation film on a semiconductor silicon device node and a film production process. Background technique: [0002] In semiconductor silicon devices, regions with different doping elements and different doping concentrations are formed through doping and diffusion. Two such different regions form a PN node or a heterogeneous node. Semiconductor silicon devices are composed of different combinations of PN junctions or heterojunctions. Due to the high sensitivity of semiconductors to impurities, a small amount of external impurity contamination or defects at the interface will cause instability or failure of the electrical parameters of the device. Therefore, for a semiconductor device, passivation and isolation technology directly determine its reliab...

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Problems solved by technology

But on the other hand, SiO 2 Poor particle penetration resistance, radiation sensitivity, and pure SiO 2 Membrane is extremely difficult to generate which limits the application of this membrane

Most of the other films need to be formed by deposition, spin coating, etc., the film formation is loose and the stress is quite different from that of silicon, which makes it poor in blocking impurity diffusion, and the defect density at the interface is high after annealing, so that the section There are many charged particles and trap charges at the interface, which lead to soft breakdown and large leakage in the device characteristic curve after passivation, and affect the reliability in later use.

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